| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Effect of Hydrogen and Nitrogen Carrier Gas Ratio on the Structural and Optical Properties of AlInGaN Alloy |
| FENG Xiang-Xu**, LIU Nai-Xin, ZHANG Lian, ZHANG Ning, ZENG Jian-Ping, WEI Xue-Cheng, LIU Zhe, WEI Tong-Bo, WANG Jun-Xi, LI Jin-Min |
Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083
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FENG Xiang-Xu, LIU Nai-Xin, ZHANG Lian et al 2013 Chin. Phys. Lett. 30 108103 |
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Abstract Undoped AlInGaN epilayers on GaN templates with different hydrogen (H2) and nitrogen (N2) carrier gas ratios (1:8, 2:8, and 3:8 as samples 1, 2 and 3, respectively) were grown. When the flow ratio of H2 and N2 rises from 1:8 to 3:8, an indium composition decrease from 3% to 1.2% is observed while the aluminum content stays constant at any flow ratio. Due to the quantum-dot-like effect, photoluminescence intensity is enhanced in the sample with the low carrier gas flow ratio of H2/N2. However, the potential well caused by indium uneven distribution is nonuniform, which is more severe in the sample with carrier gas flow ratio 1:8. The process of carrier transfer from shallow to deep potential wells would be more difficult to accomplish, resulting in the reduction of the photoluminescence intensity. This is found to be consistent with the carriers' lifetime with the help of time-resolved photoluminescence.
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Received: 14 June 2013
Published: 21 November 2013
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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78.55.Cr
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(III-V semiconductors)
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