| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
Modeling, Simulation and Analysis of Thermal Resistance in Multi-finger AlGaN/GaN HEMTs on SiC Substrates |
| WANG Jian-Hui, WANG Xin-Hua, PANG Lei, CHEN Xiao-Juan, LIU Xin-Yu** |
| Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 |
|
| Cite this article: |
|
|
|
|
|
|
Abstract The effects of varying layout geometries and various thermal boundary resistances (TBRs) on the thermal resistance of multi-finger AlGaN/GaN HEMTs are thoroughly investigated using a combination of a two-dimensional electro-thermal model coupled with the three-dimensional thermal model. Temperature measurement using micro-Raman thermography is performed to verify and enhance the accuracy of the thermal model. Simulation results indicate that thermal resistance weakly depends on the layout design because of the high thermal conductivity of SiC. Meanwhile, the analysis reveals that optimizing the TBR of the device could efficiently reduce the thermal resistance since TBR takes a significant proportion of the total thermal resistance.
|
|
|
Received: 19 December 2011
Published: 31 July 2012
|
|
| PACS: |
85.30.De
|
(Semiconductor-device characterization, design, and modeling)
|
| |
78.30.Fs
|
(III-V and II-VI semiconductors)
|
|
|
|
|
|
[1] Mishra U K, Parikh P and Wu Y F 2002 Proc. IEEE 90 1022
[2] Liu S H, Cai Y, Gong R M, Wang J Y, Zeng C H, Shi W H, Feng Z H, Wang J J, Yin J Y, Cheng P W, Qin H and Zhang B S 2011 Chin. Phys. Lett. 28 077202
[3] Wang Y, Yu N S, Li M and Lau K M 2011 Chin. Phys. Lett. 28 057102
[4] Zhang G C, Feng S W, Hu P F, Zhao Y, Guo C S, Xu Yang, Chen T S and Jiang Y J 2011 Chin. Phys. Lett. 28 017201
[5] Gaska R, Osinsky A, Yang J W and Shur M S 1998 IEEE Electron. Device Lett. 19 89
[6] Zhang G C, Feng S W, Zhou Z, Li J W and Guo C S 2011 Chin. Phys. B 20 027202
[7] Kuball M, Rajasingam S, Sarua A, Uren M J, Martin T, Hughes B T, Hilton K P and Balmer R S 2003 Appl. Phys. Lett. 82 124
[8] Killat N, Kuball M, Chou T, Chowdhury U and Jimenez J 2010 IEEE International Reliability Physics Symposium (IRPS) 528
[9] Sozzi G and Menozzi R 2007 Microelectron. Reliab. 47 65
[10] Cappelluti F, Furno M, Angelini A, Bonani F, Pirola M and Ghione G 2007 IEEE Trans. Electron. Devices 54 1744
[11] Yamamura T and Takagi K 2011 CS MANTECH Conference ( Palm Springs, California, USA, 16–19 May 2011)
[12] Riedel G J, Pomeroy J W, Hilton K P, Maclean J O, Wallis D J, Uren M J, Martin T, Forsberg U, Lundskog A, Kakanakova-Georgieva A, Pozina G, Janzen E, Lossy R, Pazirandeh R, Brunner F, Wurfl J and Kuball M 2009 IEEE Electron. Device Lett. 30 103
[13] http://www.silvaco.com
[14] Heller E R and Crespo A 2008 Microelectron. Reliab. 48 45
[15] Sarua A, Ji H, Hilton K P, Wallis D J, Uren M J, Martin T and Kuball M 2007 IEEE Trans. Electron. Devices 54 3152
[16] Kuzmik J, Bychikhin S, Pogany D, Gaquiere C, Pichonat E and Morvan E 2007 J. Appl. Phys. 101 054508
[17] Kuzmik J, Bychikhin S, Neuburger M, Dadgar A, Krost A, Kohn E and Pogany D 2005 IEEE Trans. Electron. Devices 52 1698 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
