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New Measurements for 8He Excited States
XIAO Jun, YE Yan-Lin, CAO Zhong-Xin, JIANG Dong-Xing, ZHENG Tao, HUA Hui, LI Zhi-Huan, LI Xiang-Qing, GE Yu-Cheng, LOU Jian-Ling, PANG Dan-Yang, LV Lin-Hui, LI Qi-Te, QIAO Rui, YOU Hai-Bo, CHEN Rui-Jiu, H. Sakurai, H. Otsu, M. Nishimura, S. Sakaguchi, H. Baba, Y. Togano, K. Yoneda, LI Chen, WANG Shuo, WANG He, LI Kuo-Ang, Y. Nakayama, Y. Kondo, S. Deguchi, Y. Satou, and K. H. Tshoo
Chin. Phys. Lett. 2012, 29 (8):
082501
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DOI: 10.1088/0256-307X/29/8/082501
Breakup reactions of the double borromean nucleus 8He were measured at 82.3 MeV/u on CH2 and C targets. The coincident detection of two decaying neutrons and the high performance for neutron cross talk rejection are realized in this experiment. The relative energy spectrum for 8He was reconstructed with good statistics. The spectrum exhibits a structure of two resonant peaks, one at an excitation energy of about 3.0 and the other at about 4.14 MeV, respectively. Substantially larger cross section for the first resonance is observed in comparison to the results reported previously.
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A Compact Low Noise Single Frequency Linearly Polarized DBR Fiber Laser at 1550 nm
ZHANG Wei-Nan, LI Can, MO Shu-Pei, YANG Chang-Sheng, FENG Zhou-Ming, XU Shan-Hui, SHEN Shao-Xiong, PENG Ming-Ying, ZHANG Qin-Yuan, and YANG Zhong-Min
Chin. Phys. Lett. 2012, 29 (8):
084205
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DOI: 10.1088/0256-307X/29/8/084205
A compact low noise single frequency linearly polarized distributed Bragg reflector (DBR) fiber laser based on a 1.4-cm-long homemade Er3+/Yb3+-codoped phosphate single mode glass fiber has been demonstrated. An over 50 mW stable single frequency linearly polarized fiber laser was achieved. The measured slope efficiency is more than 21.6%, and the signal-to-noise ratio (SNR) is higher than 65 dB and the laser linewidth is less than 2.0 kHz. The laser RIN is measured to be less than ?150 dB/Hz at the frequencies over 2.0 MHz, and the obtained linear polarization extinction ratio (LPER) is more than 30 dB.
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A 1342-nm Passively Mode-Locked Picosecond Oscillator with a Semiconductor Saturable Absorber Mirror
NIU Gang, YAN Ying, MA Yun-Feng, SHI Zhao-Hui, HUANG Yu-Tao, WANG Lu-Lu, SONG Ya-Li, FAN Zhong-Wei, Mikhail Grishin, Donatas Joksas, and Zenonas Kuprionis
Chin. Phys. Lett. 2012, 29 (8):
084206
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DOI: 10.1088/0256-307X/29/8/084206
A 1342-nm oscillator was successfully demonstrated by using a semiconductor saturable absorber mirror with the repetition rate of 65 MHz. The output coupler with appropriate transmission was chosen to suppress Q-switched mode-locking. At the pumping power of 1.7 W, the stable continuous-wave mode locked pulse was observed. The average output power was 140 mW and pulse width was measured to be 17.2 ps.
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Effect of Oxygen Vacancy on the Band Gap and Nanosecond Laser-Induced Damage Threshold of Ta2O5 Films
XU Cheng, YANG Shuai, WANG Ji-Fei, NIU Ji-Nan, MA Hao, QIANG Ying-Huai, LIU Jiong-Tian, LI Da-Wei, and TAO Chun-Xian
Chin. Phys. Lett. 2012, 29 (8):
084207
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DOI: 10.1088/0256-307X/29/8/084207
Ta2O5 films are deposited on fused silica substrates by electron beam evaporation method. The optical property, x-ray photoelectron spectroscopy, band gap and nanosecond laser-induced damage threshold (LIDT) of the films before and after annealing are studied. It is found that the existence of an oxygen vacancy results in the decrease of the transmittance, refractive index, both macroscopic band gap and microscopic band gap, and the LIDT of Ta2O5 films. If the oxygen vacancy forms, the macroscopic band gap decreases 2%. However, when the oxygen vacancy forms the microscopic band gap decreases 73% for crystalline Ta2O5 and 77% for amorphous Ta2O5. The serious decrease of microscopic band gap may significantly increase the absorbance of the micro-area in Ta2O5 films when irradiated by laser, thus the damage probability increases. It is consistent with our experimental results that the LIDT of the as-deposited Ta2O5 films is 7.3 J/cm2, which increases 26% to 9.2 J/cm2 when the oxygen vacancy is eliminated after annealing.
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Single-Fundamental-Mode 850 nm Surface Relief VCSEL
WEI Si-Min, XU Chen, DENG Jun, ZHU Yan-Xu, MAO Ming-Ming, XIE Yi-Yang, XU Kun, CAO Tian, and LIU Jiu-Cheng
Chin. Phys. Lett. 2012, 29 (8):
084208
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DOI: 10.1088/0256-307X/29/8/084208
The performance of the oxide-confined surface-relief (SR) structure vertical-cavity surface-emitting laser (VCSEL) is simulated and analyzed by using the three-dimensional finite-difference time-domain (FDTD) method. The impacts of the device structure parameters on the far-field characteristics are researched. A single-fundamental-mode SR VCSEL with an oxide-aperture of 15 μm is designed and produced. The single-mode power of the VCSEL is 5 mW, the threshold current is 2.5 mA, far-field divergent angles range from 7.8° to 10.8° and the side-mode suppression ratio is over 30 dB. The optical and electrical properties of the device are in agreement with the results of FDTD simulation, which shows that the SR technology can effectively suppress the higher-order-mode lasing, and make the SR VCSEL work in a single mode under a larger oxide aperture.
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K-Shell Spectra from CH Foam Tamped Ti Layers Irradiated with Nanosecond Laser Pulses
ZHAO Yang, ZHU Tuo, WEI Min-Xi, XIONG Gang, SONG Tian-Ming, HU Zhi-Min, HUANG Cheng-Wu, SHANG Wan-Li, YANG Guo-Hong, ZHANG Ji-Yan, and YANG Jia-Min
Chin. Phys. Lett. 2012, 29 (8):
085202
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DOI: 10.1088/0256-307X/29/8/085202
Hot dense titanium plasma was produced by irradiating a CH foam coated titanium layer with nanosecond laser pulses. The time-integrated emission spectra of He-like titanium were measured by using an absolutely calibrated flat crystal spectrometer. The synthetic spectra obtained by the steady collisional-radiative (CR) equilibrium model associated with the hydrodynamic simulations were compared with the experimental spectra. The results show that the electron density increases up to 5×1021 cm?3 with CH foam of density 40 mg/cc. This work indicates that an overlay of CH foam on a solid target is beneficial to create an optimum condition for K-shell emissions from a high density plasma region.
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Pressure Effects on the Magnetic Phase Transition of Mn3SnC1?xNx (x=0, 0.5)
HU Jing-Yu, WEN Yong-Chun, YAO Yuan, WANG Cong, ZHAO Qing, JIN Chang-Qing, and YU Ri-Cheng
Chin. Phys. Lett. 2012, 29 (8):
086201
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DOI: 10.1088/0256-307X/29/8/086201
The electronic transport properties of Mn3SnC and Mn3SnC0.5N0.5 were measured under pressures up to 1.8 GPa. At ambient pressure, an abrupt increase of resistance occurs around the temperature of magnetic phase transition in both samples. The transition temperature TC from paramagnetic to ferrimagnetic state decreases linearly at rates of 12.6 and 6.3 K/GPa with pressure for Mn3SnC and Mn3SnC0.5N0.5, respectively. This phenomenon could be understood by the Labbe–Jardin tight binding approximation model.
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Unipolar Resistive Switching Effects Based on Al/ZnO/P++-Si Diodes for Nonvolatile Memory Applications
SHI Wei, TAI Qiang, XIA Xian-Hai, YI Ming-Dong, XIE Ling-Hai, FAN Qu-Li, WANG Lian-Hui, WEI Ang, and HUANG Wei
Chin. Phys. Lett. 2012, 29 (8):
087201
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DOI: 10.1088/0256-307X/29/8/087201
Al/ZnO/P++-Si diodes exhibit typical unipolar resistive switching behaviors. The electroforming-free characteristics are observed after annealing the ZnO thin film at 400°C in air. The ON/OFF ratios of the resistance are in the range of 104–105 at a very low operation voltage of 0.1 V, and the devices show good endurance characteristics of over 400 cycles with negligible reduction. Finally, the memory mechanisms of the diodes are proposed on the basis of the current-voltage and resistance-voltage results. These results indicate that Al/ZnO/P++-Si devices have potential applications in nonvolatile memory devices.
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Optical Investigation of Sm3+ Doped Zinc-Lead-Phosphate Glass
Raja J. Amjad, M. R. Sahar, S. K. Ghoshal, M. R. Dousti, S. Riaz, and B. A. Tahir
Chin. Phys. Lett. 2012, 29 (8):
087304
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DOI: 10.1088/0256-307X/29/8/087304
Samarium doped lead-zinc-phosphate glasses having composition (60?x)P2O5-20PbO-20ZnO-xSm2O3 where x=0, 0.5, 1.0, 3.0mol% were prepared by using the melt quenching technique. The Archimedes method was used to measure their densities, which are used to calculate the molar volumes. The values of densities lie in the range 3.698–4.090 gm/cm3 whereas those of molar volume lie in the range of 37.24–40.00 cm?3. UV-vis-NIR absorption spectroscopy in the wavelength range 200–2000 nm was carried out. Absorption spectra consist of seven absorption peaks corresponding to the transitions from the 6H5/2 ground state to various excited energy levels. The energy band gap measured from the optical absorbance is found to be in the range of 3.88–4.43 eV and 3.68–4.33 eV for direct and indirect transitions, respectively. In addition, the photoluminescence spectrum shows four prominent emission bands centered at 560, 597, 642 and 700 nm corresponding to the 4G5/2–6HJ (J=5/2, 7/2, 9/2, 11/2) transitions respectively and the intensity of all the bands are enhanced as the concentration of Sm3+ ions increases.
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Observation of Two-Photon Induced Excited-State Absorption Phenomena in C60 and C70 Derivatives
OUYANG Xin-Hua, LU Liang, and GE Zi-Yi
Chin. Phys. Lett. 2012, 29 (8):
087801
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DOI: 10.1088/0256-307X/29/8/087801
Four fullerene dyads with different cabazole units, named a, b, c, d, were studied by using a femtosecond laser with 780 nm wavelength using Z-scan methods. Interestingly, all of them show strong two-photon induced excited-state absorption behaviors, which were observed firstly in femtosecond timescale. The values of their excited-state absorption cross-section were up to 6.07×10?18, 7.27×10?18, 3.86×10?18 and 4.51×10?18 cm?1 for a, b, c, and d, respectively.
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Effects of the V/III Ratio of a Low-Temperature GaN Buffer Layer on the Structural and Optical Properties of a-GaN Films Grown on r-Plane Sapphire Substrates by MOCVD
TIAN Yu, DAI Jiang-Nan, XIONG Hui, ZHENG Guang, RYU My, FANG Yan-Yan, and CHEN Chang-Qing
Chin. Phys. Lett. 2012, 29 (8):
088101
.
DOI: 10.1088/0256-307X/29/8/088101
We investigate the effects of the V/III ratio of a low-temperature GaN buffer layer on the growth of the overlaying nonpolar -plane GaN film grown on -plane sapphire by metal-organic chemical-vapor deposition (MOCVD). With other experimental conditions keeping fixed, the low-temperature GaN buffer layers are grown under various V/III ratios of 1000, 3000, 6000 and 9000, respectively. The characteristics of the -plane GaN films are analyzed by scanning electron microscopy, high resolution x-ray diffraction, Raman spectrum, and low temperature photoluminescence. The results show that the V/III ratio of the buffer layer has significant effects on the crystal quality of the a-plane GaN film, and a V/III ratio of 6000 is found to be the most suitable condition to achieve pit-free flat GaN surface.
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Superhydrophilic and Wetting Behavior of TiO2 Films and their Surface Morphologies
WANG Wei, ZHANG Da-Wei, TAO Chun-Xian, WANG Qi, WANG Wen-Na, HUANG Yuan-Shen, NI Zheng-Ji, ZHUANG Song-Lin, LI Hai-Xia, and MEI Ting
Chin. Phys. Lett. 2012, 29 (8):
088103
.
DOI: 10.1088/0256-307X/29/8/088103
TiO2 films, showing superhydrophilic behavior, are prepared by electron beam evaporation. Atomic force microscopy and the contact angle measurement were performed to characterize the morphology and wetting behavior of the TiO2 films. Most studies attribute the wetting behavior of TiO2 surfaces to their physical characteristics rather than surface chemistry. These physical characteristics include surface morphology, roughness, and agglomerate size. We arrange these parameters in order of effectiveness. Surface morphologies are demonstrated to be the most important. TiO2 films with particular morphologies show superhydrophilic behavior without external stimuli, and these thin films also show stable anti-contamination properties during cyclical wetting and drying.
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83 articles
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