| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Improvement of the Quality of a GaN Epilayer by Employing a SiNx Interlayer |
| YANG De-Chao1, LIANG Hong-Wei2**, SONG Shi-Wei2, LIU Yang2, SHEN Ren-Sheng2, LUO Ying-Min2, ZHAO Hai-Feng3, DU Guo-Tong1,2** |
1State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023
2School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024
3Key Laboratory of Excited State Processes, Changshun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 |
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Abstract GaN epilayers with a porous SiNx interlayer were grown by metal-organic chemical vapor deposition on c-plane sapphire substrates. It is found that the crystalline qualities are significantly improved with SiNx growth. The improvement is attributed to the reduction of the density of threading dislocations (TDs) by an over-growth process of GaN grown on a SiNx interlayer. The influence mechanism of SiNx interlayers on GaN growth mode is also discussed.
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Received: 13 March 2012
Published: 31 July 2012
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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78.55.Cr
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(III-V semiconductors)
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