| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Double-Peak N-Shaped Negative Differential Resistance in a Quantum Dot Field Effect Transistor |
| XU Xiao-Na1,2, WANG Xiao-Dong1**, LI Yue-Qiang1, CHEN Yan-Ling, JI An, ZENG Yi-Ping3, YANG Fu-Hua1,2** |
1Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2The State Key Laboratory for Superlattices and Microstructures, Chinese Academy of Sciences, Beijing 100083
3Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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Abstract Double-peak N-shaped negative differential resistance (NDR) with a high peak-to-valley ratio is observed in the output characteristics of a GaAs-based modulation-doped field effect transistor with InAs quantum dots in the barrier layer (QDFET). One NDR peak with a higher source-drain voltage VDS is explained as the real-space transfer (RST) of high-mobility electrons in the channel into the quantum dots layer, while the other with a lower VDS is caused by the high-mobility RST electrons in the channel into the modulation-doped AlGaAs barrier layer on the other side. We depict a point how a thinner Schottky barrier layer provides a stronger potential, opening a possibility of two-directional channel electron transfer when a much higher VG is applied. The result suggests that the QDFET can be an attractive candidate for high-speed logic application and memory devices.
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Received: 01 February 2012
Published: 31 July 2012
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| PACS: |
73.61.Ey
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(III-V semiconductors)
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85.30.Tv
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(Field effect devices)
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85.35.Be
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(Quantum well devices (quantum dots, quantum wires, etc.))
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