| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Forward Current Transport Mechanism and Schottky Barrier Characteristics of a Ni/Au Contact on n-GaN |
| YAN Da-Wei1**, ZHU Zhao-Min1, CHENG Jian-Min1, GU Xiao-Feng1, LU Hai2 |
1Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122
2School of Electronics Science and Engineering, Nanjing University, Nanjing 210093 |
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Abstract The forward current transport mechanism and Schottky barrier characteristics of a Ni/Au contact on n-GaN are studied by using temperature-dependent current-voltage (T–I–V) and capacitance-voltage (C–V) measurements. The low-forward-bias I–V curve of the Schottky junction is found to be dominated by trap-assisted tunneling below 400 K, and thus can not be used to deduce the Schottky barrier height (SBH) based on the thermionic emission (TE) model. On the other hand, TE transport mechanism dominates the high-forward-bias region and a modified I–V method is adopted to deduce the effective barrier height. It is found that the estimated SBH (～0.95 eV at 300 K) by the I–V method is ～0.20 eV lower than that obtained by the C–V method, which is explained by a barrier inhomogeneity model over the Schottky contact area.
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Received: 06 February 2012
Published: 31 July 2012
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