| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Gate-Recessed AlGaN/GaN MOSHEMTs with the Maximum Oscillation Frequency Exceeding 120 GHz on Sapphire Substrates |
| KONG Xin, WEI Ke, LIU Guo-Guo, LIU Xin-Yu** |
| Microwave Devices and Integrated Circuits Department, Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 |
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| Cite this article: |
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KONG Xin, WEI Ke, LIU Guo-Guo et al 2012 Chin. Phys. Lett. 29 078502 |
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Abstract Gate-recessed AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on sapphire substrates are fabricated. The devices with a gate length of 160 nm and a gate periphery of 2×75 µm exhibit two orders of magnitude reduction in gate leakage current and enhanced off-state breakdown characteristics, compared with conventional HEMTs. Furthermore, the extrinsic transconductance of an MOSHEMT is 237.2 mS/mm, only 7% lower than that of Schottky-gate HEMT. An extrinsic current gain cutoff frequency fT of 65 GHz and a maximum oscillation frequency fmax of 123 GHz are deduced from rf small signal measurements. The high fmax demonstrates that gate-recessed MOSHEMTs are of great potential in millimeter wave frequencies.
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Received: 23 March 2012
Published: 29 July 2012
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| PACS: |
85.30.-z
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(Semiconductor devices)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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85.30.Tv
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(Field effect devices)
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