| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Quantum Wells |
| YU Zhi-Guo1, CHEN Peng1,2** YANG Guo-Feng1, LIU Bin1, XIE Zi-Li1, XIU Xiang-Qian1, WU Zhen-Long2, XU Feng2, XU Zhou2, HUA Xue-Mei1, HAN Ping1, SHI Yi1 ZHANG Rong1, ZHENG You-Dou1 |
1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
2Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009 |
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| Cite this article: |
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YU Zhi-Guo, CHEN Peng YANG Guo-Feng, LIU Bin et al 2012 Chin. Phys. Lett. 29 078501 |
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Abstract The influence of dry etching damage on the internal quantum efficiency of InGaN/GaN nanorod multiple quantum wells (MQWs) is studied. The samples were etched by inductively coupled plasma (ICP) etching via a self-assembled nickel nanomask, and examined by room-temperature photoluminescence measurement. The key parameters in the etching process are rf power and ICP power. The internal quantum efficiency of nanorod MQWs shows a 5.6 times decrease substantially with the rf power increasing from 3 W to 100 W. However, it is slightly influenced by the ICP power, which shows 30% variation over a wide ICP power range between 30 W and 600 W. Under the optimized etching condition, the internal quantum efficiency of nanorod MQWs can be 40% that of the as-grown MQW sample, and the external quantum efficiency of nanorod MQWs can be about 4 times that of the as-grown one.
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Received: 21 February 2012
Published: 29 July 2012
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