FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Enhancement Effect of Patterning Resolution Induced by an Aluminum Thermal Conduction Layer with AgInSbTe as a Laser Thermal Lithography Film |
LI Hao1, WANG Rui1, GENG Yong-You1, WU Yi-Qun1,2**, WEI Jing-Song1 |
1Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 2Key Lab of Functional Inorganic Material Chemistry (Ministry of Education), Heilongjiang University, Harbin 150080 |
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Cite this article: |
LI Hao, WANG Rui, GENG Yong-You et al 2012 Chin. Phys. Lett. 29 074401 |
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Abstract We employ an aluminum (Al) film as a thermal conduction layer under the laser thermal lithography AgInSbTe phase-change film to improve the patterning resolution in laser thermal lithography. The patterns were fabricated by laser writing and wet-etching. The laser writing was conducted by a setup where the laser wavelength and the numerical aperture of the converging lens were 405 nm and 0.90, respectively. The wet-etching was carried out in a 17wt% ammonium sulfide solution. Experimental results indicate that the patterning resolution enhancement induced by an Al thermal conduction layer is more than 20% compared with that of the samples without an Al thermal conduction layer. The analysis reveals that the resolution-enhancing effect may be due to the changes of heat diffusion directions induced by the Al thermal conduction layer.
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Received: 21 February 2012
Published: 29 July 2012
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[1] Liu C P, Hsu C C, Jeng T R and Chen J P 2009 J. Alloys Compd. 488 190 [2] Usami Y, Watanabe T, Kanazawa Y, Taga K, Kawai H and Ichikawa K 2009 Appl. Phys. Express 2 126502 [3] Chu C H, Shiue C D, Cheng H W, Tseng M L, Chiang H P, Mansuripur M T and Din P 2010 Opt. Express 18 18383 [4] Lee M L, Yuan G Q, Gan C L, Ng L T, Lim C T and Ye K D 2010 Intermetallics 18 2308 [5] Deng C D, Geng Y Y, and Wu Y Q 2011 Appl. Phys. A 104 1091 [6] Mori T 2009 Jpn. J. Appl. Phys. 48 010221 [7] Hosono T and Tokura H 2009 Appl. Surf. Sci. 255 6857 [8] Li H, Geng Y Y and Wu Y Q 2011 P Laser Optoelectronics Prog. 48 19 [9] Shinagawa T, Abe Y, Matsumoto H, Li B C, Murakami K, Okada N, Tadatomo K, Kannaka M and Fujii H 2010 Phys. Status Solidi C 7 2165 [10] Dun A H, Wei J S and Gan F X 2011 Chin. Opt. Lett. 9 082101 [11] Shintani T, Anzai Y, Minemura H, Miyamoto H and Ushiyama J 2004 Appl. Phys. Lett. 85 639 [12] Yamaoka N, Murakami S, Sugawara Y, Ohshima S, Takishita T and Yokogawa F 2010 Jpn. J. Appl. Phys. 49 08KG03 [13] Yusu K, Yamamoto R, Matsumaru M, Nakamura N and Katsuda S 2009 Jpn. J. Appl. Phys. 48 03A068 [14] Put P L M, Urbach H P, Morton R D and Rusch J J 1997 Jpn. J. Appl. Phys. 36 539 [15] Jiao X B, Wei J S and Gan F X 2008 Chin. Phys. Lett. 25 209 [16] Jiao X B, Wei J S, Gan F X and Xiao M F 2009 Appl. Phys. A 94 27 [17] Holtslag A H M 1989 J. Appl. Phys. 66 1530 |
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