| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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The Effects of Femtosecond Laser Irradiation and Thermal Annealing on the Optoelectronic Properties of Silicon Supersaturated with Sulfur |
| HU Shao-Xu,HAN Pei-De**,GAO Li-Peng,MAO Xue,LI Xin-Yi,FAN Yu-Jie |
| State Key Lab on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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HU Shao-Xu, HAN Pei-De, GAO Li-Peng et al 2012 Chin. Phys. Lett. 29 046101 |
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Abstract Electrochemical capacitance-voltage profiling, Raman and absorption spectroscopy measurements are employed to characterize the electronic and optical properties of silicon supersaturated with sulfur above the equilibrium solubility limit. Silicon wafers are ion implanted with 50 keV 32S+ to a dose of 1×1016 ions/cm2 and subsequently irradiated by femtosecond pulses at a fluence of 0.2 J/cm2, followed by thermal annealing at 825 K for 30 min. The spectral response of the photodiode fabricated from the laser-irradiated sample is also investigated. It is found that femtosecond laser irradiation and subsequent thermal annealing can electrically and optically activate the supersaturated sulfur dopant in silicon, as well as reduce the implantation-induced damage in the silicon lattice.
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Received: 22 October 2011
Published: 04 April 2012
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| PACS: |
61.72.U-
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(Doping and impurity implantation)
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81.40.Tv
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(Optical and dielectric properties related to treatment conditions)
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85.60.Dw
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(Photodiodes; phototransistors; photoresistors)
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78.30.-j
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(Infrared and Raman spectra)
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