| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Removing Impurity of cBN Crystal Prepared at High Pressure and High Temperature |
| JI Xiao-Rui**, YANG Xiao-Hong |
| Department of Preparatory Course, Shenyang Institute of Engineering, Shenyang 110136 |
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| Cite this article: |
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YANG Xiao-Hong, JI Xiao-Rui 2012 Chin. Phys. Lett. 29 038101 |
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Abstract The black cubic boron nitride (cBN) single crystal is synthesized by using hBN-LiH and hBN-Li3N−B as the raw materials at high temperature and high pressure (HTHP). The colors of the cBN crystal synthesized in an hBN-Li3N−B system vary from transparent yellow, half-transparent and then opaque black with the increasing B content in the raw materials. It is worth noting that a trigonal shadow is presented at the center of the cBN crystal synthesized in the hBN-Li3N-B system but can not be found in the hBN-LiH system. Analyzing the Raman spectrum, we find that the darkening and the trigonal shadow in the cBN crystal may be due to the presence of excess B atoms. The above-mentioned phenomenon can be determined by removing impurity capacity and growth environment of the cBN crystal.
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| Keywords:
81.10.Aj
81.10.Jt
82.20.Bc
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Received: 29 October 2011
Published: 11 March 2012
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| PACS: |
81.10.Aj
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(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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81.10.Jt
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(Growth from solid phases (including multiphase diffusion and recrystallization))
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82.20.Bc
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(State selected dynamics and product distribution)
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