| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Fabrication of GaAs Nanowires by Colloidal Lithography and Dry Etching |
| CHEN Ke1, HE Jian-Jun1, LI Ming-Yu1**, LaPierre R2 |
1State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027
2Department of Engineering Physics, McMaster University, Hamilton, ON, L8S 4L7, Canada
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| Cite this article: |
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LI Ming-Yu, LaPierre R, HE Jian-Jun et al 2012 Chin. Phys. Lett. 29 036105 |
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Abstract A method for the fabrication of well-ordered periodic GaAs nanowires (NWs) is developed based on a combination of colloidal lithography and an inductively coupled plasma (ICP) etching technique using CHF3/Ar and Cl2/N2/BCl3 chemistry. The effects of etching parameters such as flow rate, and etching duration on NW fabrication are investigated. The reflectance spectra of the GaAs NW samples are measured and compared with NWs fabricated by molecular beam epitaxy.
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| Keywords:
61.46.Km
61.46.Np
62.23.Hj
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Received: 21 November 2011
Published: 11 March 2012
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| PACS: |
61.46.Km
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(Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))
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61.46.Np
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(Structure of nanotubes (hollow nanowires))
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62.23.Hj
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(Nanowires)
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