| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
|
|
|
|
Determination of the Lattice Parameters of a Si Nanobelt in a Tensile Test Process Using an MEMS Actuator |
| ZENG Hong-Jiang1,2, LI Tie1**, JIN Qin-Hua1, XU Fang-Fang3, WANG Yue-Lin1,2** |
1Science and Technology on Micro-system Laboratory, State Key Laboratories of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230026
3Analysis and Testing Center for Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050
|
|
| Cite this article: |
|
ZENG Hong-Jiang, LI Tie, JIN Qin-Hua et al 2012 Chin. Phys. Lett. 29 126101 |
|
|
|
|
Abstract We present an experimental method for in-situ observation of the lattice behavior of a single crystal silicon nanobelt during uniaxial tensile testing. An in-situ silicon nanobelt tensile testing device for transmission electron microscopy is developed. Atomic behavior and lattice parameters of the nanobelt are studied using selected area electron diffraction. A statistical and least square methods are used for reducing the measurement errors of the lattice parameters. The results suggest that the trends of the lattice parameters during the tensile test are in agreement with the increasing tensile stress in the silicon nanobelt. Furthermore, the local strain calculated from lattice parameters and the average strain of the nanobelt are compared.
|
|
|
Received: 17 July 2012
Published: 04 March 2013
|
|
|
|
|
|
|
|
[1] Li X, Ono T, Wang Y and Esashi M 2003 Appl. Phys. Lett. 83 3081
[2] Yang Y and Li X 2011 Nanotechnology 22 015501
[3] Li D, Wu Y, Kim P, Shi L, Yang P and Majumdar A 2003 Appl. Phys. Lett. 83 2934
[4] He R and Yang P 2006 Nat. Nanotechnol. 1 42
[5] Namazu T, Isono Y and Tanaka T 2000 J. Microelectromech. Syst. 9 450
[6] Hsin C L, Mai W, Gu Y, Gao Y, Huang C T, Liu Y et al 2008 Adv. Mater. 20 3919
[7] Zhang D, Breguet J M, Clavel R, Sivakov V, Christiansen S and Michler J 2010 J. Microeletromech. Syst. 19 663
[8] Wang L, Zheng K, Zhang Z and Han X 2011 Nano Lett. 11 2382
[9] Bao M 2005 Analysis and Design Principles of MEMS Devices (Amsterdam: Elsevier)
[10] Rong Y 2006 Introduction to Analytical Electron Microscopy (Beijing: Higher Education Press)
[11] Jin Q, Wang Y, Li T, Li X and Xu F 2008 Sci. Chin. Ser. E 51 1491
[12] Zheng K, Han X, Wang L, Zhang Y, Yue Y, Qin Y et al 2009 Nano Lett. 9 2471 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
