| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Analysis of Responsivity and Signal-to-Noise Ratio in PEPT |
| ZHOU Quan, GUO Shu-Xu, LI Zhao-Han, SONG Jing-Yi, CHANG Yu-Chun** |
1State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012
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| Cite this article: |
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ZHOU Quan, GUO Shu-Xu, LI Zhao-Han et al 2012 Chin. Phys. Lett. 29 114203 |
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Abstract We analyze the responsivity and signal-to-noise ratio (SNR) of a punchthrough enhanced phototransistor (PEPT). Measurement results show that the PEPT exhibits a good response to light over a wide range of intensity. Because the responsivity is still as high as 106 A/W when the bias voltage is as low as 0.2 V, the device is suitable for ultra-low voltage applications. Meanwhile, with 1–10 μA bias current, the PEPT shows the best performance for the responsivity and SNR. When incident light is as low as 3.8×10?8 W/cm2, the responsivity reaches approximately 108 A/W. The super high responsivity of PEPTs makes it possible to fabricate small sized photodetector.
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Received: 24 July 2012
Published: 28 November 2012
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| PACS: |
42.79.Pw
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(Imaging detectors and sensors)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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84.60.Jt
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(Photoelectric conversion)
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85.60.Dw
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(Photodiodes; phototransistors; photoresistors)
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[1] Shi W H, Mao R W, Zhao L, Luo L P and Wang Q M 2006 Chin. Phys. Lett. 23 735
[2] Zhou M and Zhao D G 2007 Chin. Phys. Lett. 24 1745
[3] Peng Z H, Liu Y G, Yao L S Cao Z L, Mu Q Q, Hu L F, Lu X H, Xuan L and Zhang Z Y 2011 Chin. Phys. Lett. 28 094207
[4] Abedin M N, Refaat T F, Sulima O V and Singh U N 2004 IEEE Trans. Electron Devices 51 2013
[5] Zan H W, Kao S C and Ruei S 2010 IEEE Electron Device Lett. 31 135
[6] Wang Y, Yang E S and Wang W L 1993 J. Appl. Phys. 74 6978
[7] Sridhara R, Frimel S M, Roenker K P, Pan N and Elliott J 1998 IEEE J. Lightwave Technol. 16 1101
[8] Nascetti A and Caputo D 2002 IEEE Trans. Electron Devices 49 395
[9] Wang X, Hu W, Chen X, Xu J, Wang L, Li X and Lu W 2011 J. Phys. D: Appl. Phys. 44 405102
[10] Han D, Li G, Yan F and Zhu E J 1997 IEEE Photon. Technol. Lett. 9 1391
[11] Luo H L, Chang Y C, Wong K S and Wang Y Q 2001 Appl. Phys. Lett. 79 773
[12] Liu X, Guo S X, Du G T, Wang S and Chang Y C 2009 IEEE Electron Device Lett. 30 272
[13] Zhou Q, Guo S X, Du G T, Wang Y Q and Chang Y C 2012 IEEE Trans. Electron Devices 59 1423 |
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