| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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The Theoretical Investigation and Analysis of High-Performance ZnO Double-Gate Double-Layer Insulator Thin-Film Transistors |
| GAO Hai-Xia**, HU Rong, YANG Yin-Tang |
School of Microelectronics, Xidian University, Xi'an 710071
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| Cite this article: |
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GAO Hai-Xia, HU Rong, YANG Yin-Tang 2012 Chin. Phys. Lett. 29 017305 |
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Abstract A novel structure of a ZnO thin-film transistor with a double-gate and double-layer insulator is proposed to improve device performance. Compared with the conventional ZnO thin-film transistor structure, the novel thin-film transistor has a higher on-state current, steeper sub-threshold characteristics and a lower threshold voltage, owing to the double-gate and high-k dielectric. Based on two-dimensional simulation, the potential channel distribution and the reasons for the improvement in performance are investigated.
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| Keywords:
73.50.Bk
77.55.Hf
77.55.D-
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Received: 19 September 2011
Published: 07 February 2012
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