CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of a Boron Underlayer on the Ordering and Orientation of Sputtered FePt Film |
LI Yong-Le1, HUANG An-Ping2, FENG Tang-Fu1, CHEN Qiang1, SHU Xiao-Lin1, CHEN Jun-Yang3, CHEN Zi-Yu1,2**
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1Department of Physics, Beihang University, Beijing 100191
2Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education), Beihang University, Beijing 100191
3Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
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Cite this article: |
LI Yong-Le, HUANG An-Ping, FENG Tang-Fu et al 2011 Chin. Phys. Lett. 28 067502 |
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Abstract FePt multilayer films with a boron underlayer are prepared on Si (100) substrates using magnetron sputtering and vacuum annealing is carried out to obtain the hard magnetic L10 phase. According to the microstructural and magnetic measurement results, the ordering of the FePt films is facilitated at low annealing temperatures while it is blocked at high ones by introducing boron. Moreover, (001) orientation of the samples is obviously improved by inserting a boron underlayer, which is further confirmed by the MFM analysis. The relevant mechanism is discussed by considering the diffusion of boron atoms and the consequential in-plane tensile stress.
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Keywords:
75.50.Ss
68.55.Jm
68.37.Yz
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Received: 21 February 2011
Published: 29 May 2011
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[1] Weller D, Moser A, Folks L, Best M E, Lee W, Toney M F, Schwickert M, Thiele J and Doemer M F 2000 IEEE Trans. Magn. 36 10
[2] Tomoyuki M, Tadashi K, Akira K, Toshihiko N and Jun-Ichi A 2002 Appl. Phys. Lett. 80 2147
[3] Shima T, Moriguchi T, Mitani S and Takanashi K 2002 Appl. Phys. Lett. 80 288
[4] Hsu Y N, Jeong S, Laughlin D E and Lambeth D N 2001 J. Appl. Phys. 89 7068
[5] Watanabe M, Masumoto T, Ping D H and Hono K 2000 Appl. Phys. Lett. 76 3971
[6] Luo C P, Liou S H, Gao L, Liu Y and Sellmyer D J 2000 Appl. Phys. Lett. 77 2225
[7] Xu Y, Chen J S and Wang J P 2002 Appl. Phys. Lett. 80 3325
[8] Zhu Y and Cai J W 2005 Appl. Phys. Lett. 87 032504
[9] Feng C, Li B, Han G, Teng J, Jiang Y, Liu Q and Yu G 2006 Appl. Phys. Lett. 88 232109
[10] Shen W K, Judy J H and Wang J P 2005 J. Appl. Phys. 97 10H301
[11] Zhang L J, Cai J W and Pan H Y 2007 J. Appl. Phys. 102 013905
[12] Cao J W, Cai J, Liu Y, Yang Z, Wei F L, Xia A L, Han B S, and Bai J M 2006 J. Appl. Phys. 99 08F901
[13] Li Y L, Feng T F, Chen Z Y 2011 Appl. Surf. Sci. 257 3666
[14] Seki T, Shima T, Takanashi K, Takahashi Y, Matsubara E and Hono K 2003 Appl. Phys. Lett. 82 2461
[15] Yan M L, Zeng H, Powers N and Sellmyer D J 2002 J. Appl. Phys. 91 8471 |
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