| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Annealing Effect of Pulsed Laser Deposited Transparent Conductive Ta-Doped Titanium Oxide Films |
| WU Bin-Bin, PAN Feng-Ming**, YANG Yu-E
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Department of Applied Physics, College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 211100
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| Cite this article: |
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WU Bin-Bin, PAN Feng-Ming, YANG Yu-E 2011 Chin. Phys. Lett. 28 118102 |
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Abstract Tantalum-doped TiO2 films were deposited on glass at 300°C by pulsed laser deposition (PLD). After post−annealing in vacuum (∼10−4 Pa) at temperatures ranging from 450°C to 650°C, these films were crystallized into an anatase TiO2 structure and presented good conductive features. With increasing annealing temperature up to 550°C, the resistivity of the films was measured to be around 8.7×10−4 Ω⋅cm. Such films exhibit high transparency of over 80% in the visible light region. These results indicate that tantalum-doped anatase TiO2 films have a great potential as transparent conducting oxides.
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| Keywords:
81.15.Fg
81.40.-z
68.55.-a
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Received: 09 May 2011
Published: 30 October 2011
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| PACS: |
81.15.Fg
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(Pulsed laser ablation deposition)
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81.40.-z
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(Treatment of materials and its effects on microstructure, nanostructure, And properties)
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68.55.-a
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(Thin film structure and morphology)
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