| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator |
| ZHOU Bin1, WANG Jin-Yan1**, MENG Di1, LIN Shu-Xun2, FANG Min1, DONG Zhi-Hua2, YU Min1, HAO Yi-Long1, Cheng P. WEN1
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1Institute of Microelectronics, Peking University, Beijing 100871
2 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 |
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| Cite this article: |
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ZHOU Bin, WANG Jin-Yan, MENG Di et al 2011 Chin. Phys. Lett. 28 107303 |
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Abstract Direct oxidation of composite Al/Ti metal films as gate insulators for AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs/HEMTs) is successfully realized. The devices fabricated with this novel process exhibit four orders of magnitude reduction in gate leakage current and remarkable breakdown voltage (V br=490 V vs 88 V for normal HEMT) improvement, compared with conventional Schottky-gate HEMTs. Furthermore, the transconductance of the MOSHEMT is only slightly lower (2.6%) than that of Schottky-gate HEMTs and have a wider full width of half maximum. The notable enhancement in device performance renders this new process highly promising for GaN-based microwave power amplifier applications in communication and radar systems.
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| Keywords:
73.40.Kp
73.40.Qv
85.30.De
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Received: 03 July 2011
Published: 28 September 2011
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| PACS: |
73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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