| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability |
| JI Xiao-Li1, LIAO Yi-Ming1, YAN Feng1**, SHI Yi1, ZHANG Guan2, GUO Qiang2
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1Institute of Electronics Science and Engineering, Nanjing University, Nanjing 210093
2QRE/Reliability Engineering, SMIC, 18 Wenchang Road, BDA, Beijing 100176
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| Cite this article: |
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JI Xiao-Li, LIAO Yi-Ming, YAN Feng et al 2011 Chin. Phys. Lett. 28 107302 |
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Abstract Negative bias temperature instability (NBTI) in ultrathin-plasma-nitrided-oxide (PNO) based p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) is investigated at temperatures ranging from 220 K to 470 K. It is found that the threshold voltage VT degradation below 290 K is dominated by the hole trapping process. Further studies unambiguously show that this process is unnecessarily related to nitrogen but the incorporation of nitrogen in the gate dielectric increases the probability of hole trapping in the NBTI process as it introduces extra trap states located in the upper half of the Si band gap. The possible hole trapping mechanism in NBTI stressed PNO pMOSFETs is suggested by taking account of oxygen and nitrogen related trap centers.
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| Keywords:
73.40.Qv
85.30.Tv
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Received: 28 June 2011
Published: 28 September 2011
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| PACS: |
73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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85.30.Tv
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(Field effect devices)
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