| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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High-Efficiency Graphene Photo Sensor Using a Transparent Electrode |
| LIU Tao1**, HUANG Zheng2
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1National Key Laboratory for Electronic Measurement Technology and Key Laboratory of Instrumentation Science and Dynamic Measurement, North University of China, Taiyuan 030051
2Xi'an Institute of Electromechanical Information Technology, Xi'an 710065
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| Cite this article: |
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LIU Tao, HUANG Zheng 2011 Chin. Phys. Lett. 28 107301 |
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Abstract We report the first implementation of transparent electrodes in bottom-gate graphene transistors used for photo detection. Compared to conventional nontransparent electrodes, the transparent electrodes allow photons to transmit through to the graphene beneath, providing an enlarged absorption area and thereby giving rise to an enhancement of photocurrent generation. The devices are fabricated with an asymmetric metallization scheme and the experimental results show that the maximum photocurrent density using the transparent electrodes (ITO and Pd/ITO) is over two times higher than that using the nontransparent electrodes (Ti and Pd), indicating a significant enhancement in the performance of graphene photo sensors.
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| Keywords:
73.20.Mf
73.21.La
73.50.Gr
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Received: 16 May 2011
Published: 28 September 2011
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| PACS: |
73.20.Mf
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(Collective excitations (including excitons, polarons, plasmons and other charge-density excitations))
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73.21.La
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(Quantum dots)
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73.50.Gr
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(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
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