Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba0.4Sr 0.6TiO3 Dielectric

doi:10.1088/0256-307X/27/7/078502

Chin. Phys. Lett.

2010, Vol. 27

Issue (7): 078502 DOI: 10.1088/0256-307X/27/7/078502

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba_0.4Sr _0.6TiO₃ Dielectric

WANG Li-Ping, LU Ai-Xia, DOU Wei, WAN Qing

¹Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 ²Ningbo Institute of Material Technology and Engineering. Chinese Academy of Sciences, Ningbo 315201

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WANG Li-Ping, LU Ai-Xia, DOU Wei et al 2010 Chin. Phys. Lett. 27 078502

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Abstract

We report on the fabrication and characterization of low-voltage indium-tin-oxide (ITO) thin-film transistors (TFTs) gated by Ba_0.4Sr_0.6TiO₃ (BST) gate dielectric deposited at room temperature. The 400-nm-thick BST film shows a low leakage current density of 6× 10^-8 A/cm² and a high specific capacitance of 83 nF/cm² (corresponding ε_r=37). The ITO TFTs gated by such BST dielectric operate in a depletion mode with an operation voltage of 5.0 V. The device exhibits a threshold voltage of -3.7 V, a subthreshold swing of 0.5 V/decade, a field effect mobility of 3.2 cm²/Vs and a current on/off ratio of 1.4× 10⁴.

Keywords: 85.30.Tv 77.55.+f

Received: 24 February 2010 Published: 28 June 2010

PACS:	85.30.Tv	(Field effect devices)
	77.55.+f

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https://cpl.iphy.ac.cn/10.1088/0256-307X/27/7/078502 OR https://cpl.iphy.ac.cn/Y2010/V27/I7/078502

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	WANG Li-Ping
	LU Ai-Xia
	DOU Wei
	WAN Qing

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