| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of Rapid Thermal Annealing on the Formation of In-N Clusters in Strained InGaNAs |
ZHAO Chuan-Zhen, ZHANG Rong, LIU Bin, LI Ming, XIE Zi-Li, XIU Xiang-Qian, ZHENG You-Dou |
| Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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ZHAO Chuan-Zhen, ZHANG Rong, LIU Bin et al 2010 Chin. Phys. Lett. 27 077802 |
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Abstract A model for the effect of rapid thermal annealing on the formation of In-N clusters in strained GaInNAs is developed according to thermodynamics. In the model, the lowest annealing temperature influencing the redistribution of atoms is introduced. The average variation of energy for formation per In-N bond is obtained by fitting the experimental values. Using the present model, we calculate the average number of nearest-neighbor In atoms per N atom after annealing. The obtained results are compared with the experiment. The qualitative analysis and quantitative analysis are in good agreement with each other. The model is helpful to explain the essence of the blueshift caused by annealing.
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| Keywords:
78.40.Fy
78.20.-e
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Received: 02 March 2010
Published: 28 June 2010
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| PACS: |
78.40.Fy
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(Semiconductors)
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78.20.-e
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(Optical properties of bulk materials and thin films)
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