CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Development and Characterization of Metal-Insulator-Metal Capacitors with SiNx Thin Films by Plasma-Enhanced Chemical Vapor Deposition |
WANG Cong, ZHANG Fang, KIM Nam-Young |
RFIC Center, Kwangwoon University, Seoul 139701, Korea |
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Cite this article: |
WANG Cong, ZHANG Fang, KIM Nam-Young 2010 Chin. Phys. Lett. 27 078101 |
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Abstract We report the fabrication of high breakdown voltage metal-insulator-metal (MIM) capacitors with 200-nm silicon nitride deposited by plasma-enhanced chemical vapor deposition with 0.957 SiH4/NH3 gas mixing rate, 0.9 Torr working pressure, and 60 W rf power at 250º chamber temperature. Some optimized mechanisms such as metal source wiping, pre-melting and evaporation rate adjustment are used for increasing the yield of the MIM capacitors. N2 annealing and O2/H2 plasma pre-deposition treatment is proposed to increase the reliability of the MIM capacitors in high-temperature, high-pressure, and high-humidity environments. A 97% yield and up to 148 V breakdown voltage of a 13.06 pF MIM capacitor with 0.04 mm2 die area can be fabricated.
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Keywords:
81.05.Dz
81.15.-z
84.32.Tt
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Received: 06 November 2009
Published: 28 June 2010
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PACS: |
81.05.Dz
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(II-VI semiconductors)
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81.15.-z
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(Methods of deposition of films and coatings; film growth and epitaxy)
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84.32.Tt
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(Capacitors)
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