| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Infrared Absorption Spectra of Undoped and Doped Few-Layer Graphenes |
| XU Yue-Hua, JIA Yong-Lei, ZHOU Jian, DONG Jin-Ming |
| Group of Computational Condensed Matter Physics, National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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XU Yue-Hua, JIA Yong-Lei, ZHOU Jian et al 2010 Chin. Phys. Lett. 27 057303 |
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Abstract The infrared absorption spectra of undoped few-layer graphenes with the layer number of N= 1-6, the hole- and electron-doped few-layer graphenes with the layer number of N= 1-4 have been studied based upon the tight-binding model. It is found that in contrast with the featureless optical spectrum of the undoped monolayer graphene, the undoped AB-stacking bi-, tri-, tetra- and more-layer graphene exhibit characteristic jumps in their infrared absorption (IR) spectra, which are caused by coupling between different layers. It is also found that the clear peaks exist in the IR spectra of the hole or electron-doped bi-, tri- and tetra-layer graphenes, which are induced by the strong IR transitions between their parallel valence or conduction bands. Based upon their different IR spectra, a powerful experimental tool has been proposed to identify accurately the layer number and doping type for the few-layer graphenes.
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| Keywords:
73.22.-f
73.61.-r
78.30.-j
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Received: 24 September 2009
Published: 23 April 2010
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| PACS: |
73.22.-f
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(Electronic structure of nanoscale materials and related systems)
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73.61.-r
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(Electrical properties of specific thin films)
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78.30.-j
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(Infrared and Raman spectra)
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