| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Observation of Coulomb Oscillations with Single Dot Characteristics in Heavy Doped Ultra Thin SOI Nanowires |
FANG Zhong-Hui1, ZHANG Xian-Gao1, CHEN Kun-Ji1, QIAN Xin-Ye1, XU Jun1, HUANG Xin-Fan1, HE Fei2
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| 1State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 2WuXi China Resources Huajing Micro Electronics Co. Ltd., Wuxi 214061 |
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| Cite this article: |
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FANG Zhong-Hui, ZHANG Xian-Gao, CHEN Kun-Ji et al 2010 Chin. Phys. Lett. 27 057304 |
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Abstract Nanowire devices with back gate are fabricated in a heavy doped ultra thin SOI layer by electron beam lithography. Regular and periodic Coulomb oscillations with single dot behavior are observed in an appropriate back gate voltage range. The oscillation period can be determined by the back gate capacitance. The role of the back gate can control the electrical characteristics from the multi-dot junction regimes to the single dot junction regimes. These Coulomb oscillations due to single-electron tunneling are not smeared out by thermal vibration energy when the temperature is less than 40 K.
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| Keywords:
73.23.Hk
73.63.Nm
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Received: 09 December 2009
Published: 23 April 2010
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| PACS: |
73.23.Hk
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(Coulomb blockade; single-electron tunneling)
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73.63.Nm
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(Quantum wires)
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