Chin. Phys. Lett.  2010, Vol. 27 Issue (4): 048101    DOI: 10.1088/0256-307X/27/4/048101
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Electroluminescence from Multilayered Diamond/CeF3/SiO2 Films

LEI Tong, WANG Xiao-Ping, WANG Li-Jun, LV Cheng-Rui, ZHANG Shi, ZHU Yu-Zhuan

College of Science, University of Shanghai for Science andTechnology, Shanghai 200093
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LEI Tong, WANG Xiao-Ping, WANG Li-Jun et al  2010 Chin. Phys. Lett. 27 048101
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Abstract

We report a thin film electroluminescent device with a three-layer structure (diamond/CeF3/SiO2 films), which has a luminance of 1.5 cd/m2 at dc voltage 215 V. The electroluminescence spectrum at room temperature shows that the main peaks locate at 527 and 593 nm, which are attributed to isolated emission centers of Ce3+ ions.

Keywords: 81.05.Uw      81.15.Gh      68.55.-a      78.60.Fi      85.60.Jb     
Received: 24 November 2009      Published: 27 March 2010
PACS:  81.05.Uw  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  68.55.-a (Thin film structure and morphology)  
  78.60.Fi (Electroluminescence)  
  85.60.Jb (Light-emitting devices)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/27/4/048101       OR      https://cpl.iphy.ac.cn/Y2010/V27/I4/048101
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LEI Tong
WANG Xiao-Ping
WANG Li-Jun
LV Cheng-Rui
ZHANG Shi
ZHU Yu-Zhuan
[1] Zaitsev A M 2001 Optical Properties of Diamonds: A Data Handbook (Berlin: Springer)
[2] Collins S T, Kamo M and Sato Y 1990 J. Mater. Res. 5 2507
[3] Bai S Y, Tang Z A,Huang Z X, Yu J,Wang J and Liu G C 2009 Chin. Phys. Lett. 26 076601
[4] Li H D, Zou G T,Wang Q L, Cheng S H, Li B, LÜJ N, LÜ X Y and Jin Z S 2008 Chin. Phys. Lett. 25 1803
[5]Shi C S, Deng J, Wei Y G, Zhang G B, Zimmerer G, Becker J, Shen D Z and Hu G Q 2000 Chin. Phys. Lett. 17 532
[6] Auffray E et al 1996 Nucl. Instrum. Methods Phys. Res. A 378 171
[7] Vaneijk C W E 2001 Nucl. Instrum. Methods Phys. Res. A 460 1
[8] Moses W W and Derenzo S E 1990 Nucl. Instrum. Methods Phys. Res . A 299 51
[9] Shimamura K, Víllora E G,Nakakita S, Nikl M and Ichinose N 2004 J. Cryst. Growth 264 208
[10] Chai R T, Lian H Z, Li C X, Cheng Z Y, Hou Z Y, Huang S S and Lin J 2009 J. Phys. Chem. C 113 8070
[11] Li C X, Liu X M, Yang P P, Zhang C M, Lian H Z and Lin J 2008 J. Phys. Chem. C 112 2904
[12] Zhu L, Li Q, Liu X D, Li J Y, Zhang Y F, Meng J and Cao X Q 2007 J. Phys. Chem. C 111 5898
[13] Wang Z L, Quan Z W, Jia P Y Lin C K, Luo Y, Chen Y, Fang J, Zhou W, Connor C J O and Lin J 2006 Chem. Mater. 18 2030
[14] Tanaka K, Inoue Y, Okamoto S, Kobayashi K and Takizawa K 1997 Jpn. J. Appl. Phys. 36 3517
[15] Okamoto K and Hanaoka K 1988 Jpn. J. Appl. Phys. 27 L1923
[16] Sohn S H and Hamakawa Y 1992 Jpn. J. Appl. Phys. 31 3901
[17] Kodama N, Yamaga M and Henderson B 1998 J. Appl. Phys. 84 5820
[18] Wang X P, Wang L J, Zhang B L,Yao N, Liang E J, Zhang L, Ma H Z, Cheng G P, Wang J E, Li G T, Li W Q, Yang S E and Bian C 2003 Semicond. Sci. Technol. 18 144
[19] Vercaemst R, Poelman D, Van Meirhaeghe R L, Fiermans L, Laflere W H and Cardon F 1995 J. Lumin. 63 19
[20] Tanaka K, Ohgoh T, Kimura K, Yamamoto H, Shinagawa K and Sato K 1995 Japan. J. Appl. Phys. 34 L1651
[21] Tanaka D, Inoue Y and Okamoto S 1997 Jpn. J. Appl. Phys. 36 3517
[22] Wei Y G, Shi C S, Qi Z M, Wang Z, Tao Y and Wang W 2001 Chin. J. Lumin. 22 243 (in Chinese)
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