| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Growth and Characterization of CIS Thin Films Prepared by Ion Beam Sputtering Deposition |
FAN Ping, LIANG Guang-Xing, ZHENG Zhuang-Hao, CAI Xing-Min, ZHANG Dong-Ping |
| Institute of Thin Film Physics and Application, College ofPhysics Science and Technology, Shenzhen University, Shenzhen 518060 |
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| Cite this article: |
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FAN Ping, LIANG Guang-Xing, ZHENG Zhuang-Hao et al 2010 Chin. Phys. Lett. 27 046801 |
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Abstract Copper indium diselenide (CuInSe2) thin films were prepared by ion beam sputtering Cu, In and Se targets continuously on BK7 glass substrates and the three-layer film was then annealed in the same vacuum chamber. X-ray diffraction shows that the CuInSe2 thin films have a single chalcopyrite structure with preferential (112) orientation. Scanning electron microscopy reveals that the CIS thin films consist of uniform and densely packed grain clusters. Energy dispersive x-ray spectroscopy demonstrates that the elemental composition of CIS films approaches the stochiometric composition ratios of 1:1:2. Raman measurement shows that the main peak is at about 174 cm-1 and this peak is identified as the A1 vibrational mode from chalcopyrite ordered CuInSe2. Optical transmission and absorption spectroscopy measurement reveal an energy band gap of about 1.05 eV and an absorption coefficient of 105 cm-1. The film resistivity is about 0.01 Ωcm.
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| Keywords:
68.55.Ag
81.15.Cd
78.20.Ci
73.25.+i
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Received: 14 October 2009
Published: 27 March 2010
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| PACS: |
68.55.ag
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(Semiconductors)
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81.15.Cd
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(Deposition by sputtering)
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78.20.Ci
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(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
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73.25.+i
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(Surface conductivity and carrier phenomena)
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[1] Yang J X, Jin Z G, Chai Y T, Du H Y, Liu T J and Wang T 2009 Thin Solid Film. 517 6117
[2] Repins I, Contreras M A, Egaas B, DeHart C, Scharf J, Perkins C L, To B and Noufi R 2008 Prog. Photovolt. 16 235
[3] Chen G S, Yang J C, Chan Y C and Yang L C 2009 Sol. Energy Master. Sol. Cells 93 1351
[4] Zhang L, He Q, Jiang W L et al 2008 Chin. Phys. Lett. 25 734
[5] Kannan M D, Balasundaraprabhu R, Jayakumar S and Ramanathaswamy P 2004 Sol. Energy Master. Sol. Cells 81 379
[6] Ao J P, Liang Y, Li Y et al 2009 Acta Phys. Sin. 58 1870 (in Chinese)
[7] Victor P, Nagaraju J and Krupanidhi S B 2000 Solid State Commun. 116 649
[8] Luo P F, Zhu C F and Jiang G S 2008 Solid State Commun. 146 57
[9] López-Garciá J and Guillén C 2009 Phys. Status. Solids A 206 84
[10] Liu J and Zhu J 2007 Acta Phys. Sin. 56 574 (in Chinese)
[11] Noufi R, Axton R, Herrington C and Deb S K 1984 Appl. Phys. Lett. 45 668
[12] Kauk M, Altosaar M, Raudoja J, Jagomagi A, Danilson M and Varema T 2007 Thin Solid Film 515 5880
[13] Álvarez-García J, Barcones B, Pérez-Rodíguez A, Romano-Rodíguez A, Morante J R, Janotti A, Wei S H and Scheer R 2005 Phys. Rev. B 71 054303
[14] lzquierdo-Roca V, Álvarez-garcía J, Calvo-Barrio L, pérez-Rodíguez A, Morante J R, Bermudez V, Ramdani O, Grand P and Kerrec O 2008 Surf. Interface Anal. 40 798
[15] Rincon H C and Ramirez F J 1992 J. Appl. Phys. 72 432
[16] Minceva-Sukarova B, Najdoski M, Grozdanov L and Chunnilall C J 1997 J. Mol. Struct. 410 267
[17] Kajari Das, Subhendu K, Panda and Chaudhuri S 2007 Appl. Surf. Sci. 253 5166
[18] Pankove J I 1976 Optical Processes in Semiconductors (New York: Dover Publications) p 53
[19] Shah N M, Ray J R, Kheraj V A, Desai M S, Panchal C J and Rehani B 2009 J. Mater. Sci. 44 316 |
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