| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Optical Properties of Zinc-Blende InGaN/GaN Quantum Well Structures and Comparison with Experiment |
| PARK Seoung-Hwan1, LEE Yong-Tak2
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| 1Department of Electronics Engineering, Catholic Universityof Daegu, Hayang, Kyeongsan, Kyeongbuk 712-702, Republic of Korea2Department of Information and Communications, Gwangju Institute ofScience and Technology 1 Oryong-dong, Buk-gu, Gwangju 500-712, Republicof,Korea |
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| Cite this article: |
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PARK Seoung-Hwan, LEE Yong-Tak 2010 Chin. Phys. Lett. 27 044208 |
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Abstract Optical properties of zinc-blende InGaN/GaN QW structures are investigated using the multiband effective-mass theory. The transition wavelength values at 300 K ranged from 440 to 570 nm in the investigated range of the In composition and the well width. The theoretical wavelengths show reasonable agreement with the experimental results. The optical gain decreases with the increasing well width. This is mainly due to the reduction in the quasi-Fermi-level separation because the optical matrix element increases with the well width.
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| Keywords:
42.55.Px
42.60.-v
71.22.+i
72.80.Ey
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Received: 27 July 2009
Published: 27 March 2010
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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42.60.-v
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(Laser optical systems: design and operation)
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71.22.+i
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(Electronic structure of liquid metals and semiconductors and their Alloys)
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72.80.Ey
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(III-V and II-VI semiconductors)
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