FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Diode Pumped Operation of Tm,Ho:YVO4 Microchip Laser |
LI Gang, YAO Bao-Quan, ZHANG Chao-Hui, WANG Qiang, WANG Yue-Zhu, JU You-Lun |
National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001 |
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Cite this article: |
LI Gang, YAO Bao-Quan, ZHANG Chao-Hui et al 2010 Chin. Phys. Lett. 27 034201 |
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Abstract A cryogenic and room-temperature diode pumped Tm,Ho:YVO4 microchip laser with 0.5 mm crystal length lasing around 2μm is demonstrated for the first time to our knowledge. Under cryogenic temperature of 77 K, as much as 1.2 W output and slope efficiency of 35% with respect to absorbed pump power are obtained. At temperature of 5ºC the maximum output power of 48mW is obtained at an absorbed pump power of 503 mW, representing a 9.5% optical to optical conversion efficiency. In addition, as much as 8 mW single-frequency output lasing at 2052.6 nm is achieved at room temperature of 15ºC.
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Keywords:
42.55.Xi
42.60.Pk
42.72.Ai
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Received: 23 November 2009
Published: 09 March 2010
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