| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Influence of Radio-Frequecy Power on Structural and Electrical Properties of Sputtered Hafnium Dioxide Thin Films |
| LIU Wen-Ting, LIU Zheng-Tang, TAN Ting-Ting, YAN Feng |
| School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072 |
|
| Cite this article: |
|
LIU Wen-Ting, LIU Zheng-Tang, TAN Ting-Ting et al 2010 Chin. Phys. Lett. 27 027703 |
|
|
|
Abstract Hafnium dioxide (HfO2) thin films are prepared by rf magnetron sputtering. The influences of rf power on the structure, chemical states and electrical properties of the thin films were investigated through x-ray diffraction, x-ray photoelectron spectroscopy, capacitance-voltage and leakage current density-voltage measurement and UV-VIS spectrophotometry. The results show that the HfO2 thin films have a mixed structure of amorphous and polycrystalline phases. With increasing rf power, the crystallinity is enhanced and the crystallite size of the thin films is increased. The oxidation of Hf atoms is improved with increasing rf power for the HfO2 thin films. The flat band shift, oxide charge density and leakage current density of the thin films all decrease as the rf power increases from 50 to 110 W, and then increase as the rf power is increased to 140 W. The band gap energy is smaller for the thin film deposited at 110 W.
|
| Keywords:
77.55.+f
73.61.Le
68.55.Nq
|
|
|
Received: 27 August 2009
Published: 08 February 2010
|
|
|
|
|
|
|
|
[1] Wilk G D et al 2001 J. Appl. Phys. 89 5243
[2] Kim H, Mclntyre P C and Saraswat K C 2003 App. Phys. Lett. 82 106
[3] Pereira L et al 2005 Mater. Sci. Eng. B 118 210
[4] Toledano-Luque M et al 2006 Mater. Sci. Semicond. Process. 9 1020
[5] Tan T T, Liu Z T, Liu W T and Zhang W H 2008 Chin. Phys. Lett. 25 3750
[6] Huang Y J, Huang Y, Ding S J, Zhang W And Liu R 2007 Chin. Phys. Lett. 24 2942
[7] Al-Kuhaili M F 2004 Opt. Mater. 27 383
[8] Shen Y M, Shao S Y, Deng Z X, He H B, Shao J D and Fan Z X 2007 Chin. Phys. Lett. 24 2963
[9] Dhar S et al 2005 App. Phys. Lett. 87 241504
[10] Nishide T, Honda S, Matsuura M and Ide M 2000 Thin Solid Films 371 61
[11] He J Q, Teren A, Jia C L, Ehrhart P, Urban K, Waser R and Wang R H 2004 J. Cryst. Growth 262 295
[12] Jiang R and Li Z-F 2006 Chin. Phys. Lett. 26 057101
[13] He Z, Wu W, Xu H, Zhang J and Tang Y 2006 Vacuum 81 211
[14] Wang S Q and Mayer J W 1988 J. Appl. Phys. 64 4711
[15] Houssa M 2004 High-k Gate Dielectrics (Bristol: Institute of Physics Publishing)
[16] Pereira L, Barquinha P, Fortunato E and Martins R 2006 Mater. Sci. Semicond. Process. 9 1125
[17] Tauc J, Grigorovici R and Vancu A 1966 Phys. Status Solidi 15 627
[18] Xiong K and Robertson J 2005 Microelectron. Eng. 80 408
[19] Khoshman J M and Kordesch M E 2006 Surf. Coat. Technol. 201 3530
[20] Kato H, Nango T, Miyagawa T, Katagin T, Seol K S and Ohki Y 2002 J. Appl. Phys. 92 1106
[21] Zheng Y B, Wang S J, Huan A C H, Tan C Y, Yan L and Ong C K 2005 Appl. Phys. Lett. 86 112910
[22] Kosacki I, Petrovsky V and Anderson H U 1999 Appl. Phys. Lett. 74 341 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
