| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Preparation of Ultra Low- k Porous SiOCH Films from Ring-Type Siloxane with Unsaturated Hydrocarbon Side Chains by Spin-On Deposition |
YANG Chun-Xiao, ZHANG Chi, SUN Qing-Qing, XU Sai-Sheng, ZHANG Li-Feng, SHI Yu, DING Shi-Jin, ZHANG Wei
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| State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433 |
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| Cite this article: |
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YANG Chun-Xiao, ZHANG Chi, SUN Qing-Qing et al 2010 Chin. Phys. Lett. 27 027701 |
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Abstract An ultra-low-dielectric-constant (ultra low-k, or ULK) porous SiOCH film is prepared using a single ring-type siloxane precursor of the 2,4,6,8-tetravinyl-2,4,6,8-tetramethylcyclotetrasiloxane by means of spin-on deposition, followed by crosslinking reactions between the precursor monomers under UV irradiation. The as-prepared film has an ultra low k of 2.41 at 1 MHz due to incorporation of pores and hydrocarbon crosslinkages, a leakage current density of 9.86×10-7 A/cm2 at 1 MV/cm, as well as a breakdown field strength of ~1.5 MV/cm. Further, annealing at 300°C results in lower k (i.e., 1.94 at 1 MHz), smaller leakage current density (2.96×10-7 A/cm2 at 1 MV/cm) and higher breakdown field strength (about 3.5 MV/cm), which are likely caused by the short-ranged structural rearrangement and reduction of defects in the film. Finally, the mechanical properties and surface morphology of films are also evaluated after different temperature annealing.
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| Keywords:
77.55.+f
85.40.Sz
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Received: 13 August 2009
Published: 08 February 2010
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