| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
|
|
|
|
High Current Operation of a Semi-insulating Gallium Arsenide Photoconductive Semiconductor Switch Triggering a Spark Gap |
| XU Ming1, SHI Wei1,2, HOU Lei1, XUE Hong1, WU Shen-Jiang1, DAI Hui-Ying3 |
| 1Department of Applied Physics, Xi'an University of Technology, Xi'an 7100482State key Laboratory of Electrical Insulation for Power Equipment, Xi' an Jiaotong University, Xi' an 7100493Department of Science, Air Force Engineering University, Xi'an 710051 |
|
| Cite this article: |
|
XU Ming, SHI Wei, HOU Lei et al 2010 Chin. Phys. Lett. 27 024212 |
|
|
|
Abstract A transient peak current as high as 5.6 kA is obtained by a GaAs photoconductive semiconductor switch (PCSS) in series with a spark gap. Based on the characteristics of the GaAs PCSS, mechanisms of discharge between the PCSS and the spark gap are discussed. It is implied that a hybrid operation mode of photo-activated charge domain occurs due to the superposition of the bias voltage and the instantaneous radio frequency voltage.
|
| Keywords:
42.54.Re
72.40.+w
85.30.Fg
|
|
|
Received: 10 October 2009
Published: 08 February 2010
|
|
| PACS: |
42.54.Re
|
|
| |
72.40.+w
|
(Photoconduction and photovoltaic effects)
|
| |
85.30.Fg
|
(Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices))
|
|
|
|
|
|
[1] Shi W and Hou L 2006 Chin. Phys. Lett. 23 2867
[2] Shi W, Jia W L, Hou L, Xu J Z and Zhang X C 2004 Chin. Phys. Lett. 21 1842
[3] Shi W, Chen E Z, Zhang X B and Li Q 2002 Chin. Phys. Lett. 19 1119
[4] Shi W, Dai H Y and Sun X F 2003 Chin. Opt. Lett. 1 553
[5] Shi W and Tian L 2006 Appl. Phys. Lett. 89 202103
[6] Motet T, Nees J, Williamson S and Mourou G 1991 Appl. Phys. Lett. 59 1455
[7] Hendriks J 2005 J. Phys. D: Appl. Phys. 38 2798
[8] Hendriks J 2006 J. Phys. D: Appl. Phys. 39 274
[9] Brussaard G J H and Hendriks J 2007 IEEE Trans. Dielectrics and Electrical Insulation 14 976
[10] Copeland J A 1967 Spectrum IEEE 4 71
[11] Copeland J A 1967 Electronics 40 91
[12] Gun J B 1966 IBM J. Res. 10 310
[13] Shi W and Liang Z X 1999 Chin. J. Semiconduct. 20 53
[14] Tian L and Shi W 2008 Chin. Phys. Lett. 25 2511
[15] Byszewski W W, Enright M J and Proud J M 1982 IEEE Trans. Plasma Sci. 10 281 %DOI: 10.1109/TPS.1982.4316190
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
