| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Self-Collimation in Planar Photonic Crystals Fabricated by CMOS Technology |
YANG Zhi-Feng, WU Ai-Min, FANG Na, JIANG Xun-Ya, LIN Xu-Lin, WANG Xi, ZOU Shi-Chang
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| State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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YANG Zhi-Feng, WU Ai-Min, FANG Na et al 2010 Chin. Phys. Lett. 27 024203 |
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Abstract We report a self-collimating demonstration in planar photonic crystals (PhCs) fabricated in silicon-on-insulator (SOI) wafers using 0.18 μm silicon complimentary metal oxide semiconductor (CMOS) techniques. The emphasis was on demonstrating the self-collimation effect by using the standard CMOS equipment and process development of an optical test chip using a high-volume manufacturing facility. The PhCs are designed on the 230-nm-top-Si layer using a square lattice of air holes 280 nm in diameter. The lattice constant of the PhCs is 380 nm. The experimentally obtained wavelengths for self-collimation are in excellent agreement with theory.
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| Keywords:
42.70.Qs
42.82.Cr
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Received: 21 May 2009
Published: 08 February 2010
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| PACS: |
42.70.Qs
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(Photonic bandgap materials)
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42.82.Cr
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(Fabrication techniques; lithography, pattern transfer)
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