| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Giant Temperature Coefficient of Resistance in ZnO/Si (111) Thin Films |
| ZHOU Xiao-Fang1, ZHANG Hui1, LI Yong1, TANG Xiao-Dong2, CHEN Qing-Ming1, ZHANG Peng-Xiang1 |
| 1Institute of Advanced Material for Photoelectronics, Kunming University of Science and Technology, Kunming 6500512Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200241 |
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| Cite this article: |
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ZHOU Xiao-Fang, ZHANG Hui, LI Yong et al 2010 Chin. Phys. Lett. 27 018101 |
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Abstract Giant negative temperature coefficient of resistance (TCR) was observed in ZnO/Si (111) thin films. The films were grown using the pulsed laser deposition (PLD) technique, taking Si (111) wafer as substrates, with a substrate at the temperature below 450°C in the PLD. It is found that both TCR-temperature behavior and TCR value are strongly affected by deposition temperature. The maximal TCR value over -10.9%K-1 can be observed at the deposition temperature from 20°C to 350°C and reaches to -13%K-1 at deposition temperature 20°C where the film shows X-ray diffraction amorphous. The results suggest that the ZnO/Si films demonstrate great potentials when used in a low-cost, high-performance, non-cooling and highly sensitive bolometer.
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| Keywords:
81.05.Dz
73.43.Fj
73.50.-h
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Received: 05 June 2009
Published: 30 December 2009
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| PACS: |
81.05.Dz
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(II-VI semiconductors)
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73.43.Fj
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(Novel experimental methods; measurements)
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73.50.-h
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(Electronic transport phenomena in thin films)
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