| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Effect of Annealing Conditions on Properties of Sol-Gel Derived Al-Doped ZnO Thin Films |
| GAO Mei-Zhen, ZHANG Feng, LIU Jing, SUN Hui-Na |
| Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University, Lanzhou 730000 |
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| Cite this article: |
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GAO Mei-Zhen, ZHANG Feng, LIU Jing et al 2009 Chin. Phys. Lett. 26 088105 |
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Abstract Transparent conductive Al-doped ZnO (AZO) thin films are prepared on normal glass substrates by the sol-gel spin coating method. The effects of drying conditions, annealing temperature and cooling rate on the structural, electrical and optical properties of AZO films are investigated by x-ray diffraction, scanning electron microscopy, the four-point probe method and UV-VIS spectrophotometry, respectively. The deposited films show a hexagonal wurtzite structure and high preferential c-axis orientation. As the drying temperature increases from 100°C to 300°C the resistivity of AZO films decreases dramatically. In contrast to the annealed films cooled in a furnace and in air, the resistivity of the annealed film which is cooled at -15°C is greatly reduced. Increasing the cooling rate dramatically increases the electrical conductivity of AZO films.
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| Keywords:
81.05.Dz
81.20.Fw
73.25.+i
78.20.Ci
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Received: 03 March 2009
Published: 30 July 2009
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| PACS: |
81.05.Dz
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(II-VI semiconductors)
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81.20.Fw
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(Sol-gel processing, precipitation)
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73.25.+i
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(Surface conductivity and carrier phenomena)
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78.20.Ci
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(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
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