| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Epitaxial Growth of Graphene on 6H-SiC (0001) by Thermal Annealing |
| TANG Jun1, LIU Zhong-Liang1, KANG Chao-Yang1, PAN Hai-Bin1, WEI Shi-Qiang1, XU Peng-Shou1, GAO Yu-Qiang2, XU Xian-Gang2 |
| 1National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 2300292State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 |
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| Cite this article: |
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TANG Jun, LIU Zhong-Liang, KANG Chao-Yang et al 2009 Chin. Phys. Lett. 26 088104 |
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Abstract An epitaxial graphene (EG) layer is successfully grown on a Si-terminated 6H-SiC (0001) substrate by the method of thermal annealing in an ultrahigh vacuum molecular beam epitaxy chamber. The structure and morphology of the EG sample are characterized by reflection high energy diffraction (RHEED), Raman spectroscopy and atomic force microscopy (AFM). Graphene diffraction streaks can be seen in RHEED. The G and 2D peaks of graphene are clearly observed in the Raman spectrum. The AFM results show that the graphene nominal thickness is about 4-10 layers
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| Keywords:
81.05.Tp
73.50.-h
68.55.Jk
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Received: 21 April 2009
Published: 30 July 2009
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