| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Bias Voltage Controlled Positive Magnetoresistance of Fe0.05-C0.95/Si Heterostructures |
| WU Li-Hua1,2, ZHANG Xiao-Zhong1,2, ZHANG Xin1,2, WAN Cai-Hua1,2, GAO Xi-Li1,2, TAN Xin-Yu1,2, YUAN Jun3 |
| 1Key Laboratory of Advanced Materials of Education Ministry, Department of Materials Science and Engineering, Tsinghua University, Beijing 1000842National Center for Electron Microscopy (Beijing), Beijing 1000843Department of Physics, University of York, Heslington, York YO10 5DD, UK |
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WU Li-Hua, ZHANG Xiao-Zhong, ZHANG Xin et al 2009 Chin. Phys. Lett. 26 087301 |
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Abstract Fe-doped amorphous carbon films of about 100nm in thickness are deposited on n-type silicon substrates by pulsed laser deposition (PLD), and positive magnetoresistance (MR) is observed for these Fe-doped amorphous carbon/n-Si heterostructures under current-perpendicular-to-plane configuration at forward bias. Two MR peaks are observed in the temperature range 40-120K and the positive MR varies with applied bias voltage. This bias voltage controlled MR may be related to the magnetic-field-controlled freeze out effect and recombination through the deep trapping states in the Fe-doped carbon films.
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| Keywords:
73.40.Lq
71.23.Cq
75.47.De
75.47.-m
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Received: 09 April 2009
Published: 30 July 2009
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[1] Solin S A, Thio T, Hines D R and Heremans J J 2000 Science 289 1530
[2] Issi J P, Mangez J H and Heremans J 1976 Phys. Rev.B 14 4381
[3] Forrest R D, Burden A P, Silva S R P, Cheah L K and Shi X1998 App. Phys. Lett. 73 3784
[4] Inoue T, Ogletree D F and Salmeron M 2000 Appl. Phys.Lett. 76 2961
[5] Hastas N A, Dimitriadis C A, Tassis D H and Logothetidis S2001 App. Phys. Lett. 79 638
[6] Konofaos N, Angelis C T, Evangelou E K, Dimitriadis C Aand Logothetidis S 2001 App. Phys. Lett. 79 2381
[7] Trakhtenberg I.Sh, Vladimirov A B, Rubstein A P, KuzminaaE V, Uemurab K, Gontarc A G and Dub S N 2003 Diamond Relat.Mater. 12 1788
[8] Corbella C, Oncins G, Gomez M A, Polo M C, Pascual E,Garcia-Cespedes J, Andujar J L and Bertran E 2005 DiamondRelat. Mater. 14 1103
[9] Valentini L, Cantalini C, Lozzi L, Picozzi S, Armentano I,Kenny J M and Santucci S 2004 Sensors Actuators B 10033
[10] Gao X L, Xue Q Z, Hao L Z, Li Q, Zheng Q B and Tian P$2007$ App. Phys. Lett. 91 092014
[11] Schoonus J J H M, Bloom F L, Wagemans W, Swagten H J Mand Koopmans B 2008 Phys. Rev. Lett. 100 127202
[12] Schoonus J J H M, Kohlhepp J T, Swagten H J M andKoopmans B 2008 J. Appl. Phys. 103 07F309
[13] Bhattacharyya S, Henley S J, Lock D, Blanchard N P andSilvand S R P 2006 Appl. Phys. Lett. 89 022113
[14] Hao L Z, Xue Q Z, Gao X L, Li Q, Zheng Q B and Yan K Y2007 J. Appl. Phys. 101 053718J
[15] Tian P and Zhang X 2007 Carbon 45 1764
[16] Zhu D D and Zhang X 2004 J. Appl. Phys. 951906
[17] Xue Q Z and Zhang X 2005 Carbon 43 760
[18] Xue Q Z and Zhang X 2005 Mater. Sci. Forum 475 2207
[19] Zhang X, Xue Q Z and Tian P 2004 Patent No.CN1487115-A, CN1267575-C
[20] Sladek R J 1958 J. Phys. Chem. Solids 5 157
[21] Hickmott T W 1992 Phys. Rev. B 46 12342
[22] Xue Q Z, Zhang X, Tian P, Jin C 2004 App. Phys.Lett. 85 4397
[23] Street R A, Zesch J and Thompson M 1983 J. Appl.Phys. Lett. 43 672
[24] Robertson J 2001 Phys. Status Solidi A 186177
[25] Street R A 1978 Phys. Rev. B 17 3984
[26] Shklovskii B I, Fritzsche H and Baranovskii S D 1989 Phys. Rev. Lett. 62 2989
[27] Michael P D, Shinpei Y, Shinya K, Teruo O and Kensuke K2009 Nature 457 1112 |
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