| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Tunable Anisotropic Absorption of Ag-Embedded SiO2 Thin Films by Oblique Angle Deposition |
| XIAO Xiu-Di1,2, DONG Guo-Ping1,2, SHAO Jian-Da1, FAN Zheng-Xiu1, HE Hong-Bo1, QI Hong-Ji1,3 |
| 1Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Science, Shanghai 2018002Graduate School of Chinese Academy of Sciences, Beijing 1000493Shanghai Daheng of Optics and Fine Mechanics Co., Ltd, Shanghai 201800 |
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| Cite this article: |
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XIAO Xiu-Di, DONG Guo-Ping, SHAO Jian-Da et al 2009 Chin. Phys. Lett. 26 086801 |
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Abstract Ag-embedded SiO2 thin films are prepared by oblique angle deposition. Through field emission scanning electron microscopy (SEM), an orientated slanted columnar structure is observed. Energy-dispersive x-ray (EDX) analysis shows the Ag concentration is about 3% in the anisotropic SiO2 matrix. Anisotropic surface plasma resonance (SPR) absorption is observed in the Ag-embedded SiO2 thin films, which is dependent on polarization state and incidence angle of two orthogonal polarized lights and the deposition angle. This means that optical properties and anisotropic SPR absorption can be tunable in Ag-embedded SiO2 thin films. Broadband polarization splitting is also observed and the transmission ratio Tp/Ts between p-and s-polarized lights is up to 2.7 for thin films deposited at α=70°, which means that Ag-embedded SiO2 thin films are a promising candidate for thin film polarizers.
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| Keywords:
68.37.Hk
81.07.Be
81.40.Ef
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Received: 04 January 2009
Published: 30 July 2009
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| PACS: |
68.37.Hk
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(Scanning electron microscopy (SEM) (including EBIC))
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81.07.Be
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81.40.Ef
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(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
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[1] Chen Y, Raravikar N, Schadler L, Ajayan P, Zhao Y, Lu T,Wang G and Zhang X 2002 Appl. Phys. Lett. 81 975
[2] Wang Q, Han J, Gong H, Chen D, Zhao X, Feng J and Ren J2006 Adv. Funct. Mater. 16 2405
[3] Xiao X, Liu Q, Dong G, Zhao X and Liu H 2007 J.Sol-Gel Sci. Techn. 41 169
[4] Beecroft L and Ober C 1997 Chem. Mater. 9 1302
[5] Armelao L, Barreca D, Bottaro G, Gasparotto A, Gross S,Maragno C and Tondello E 2006 Coord. Chem. Rev. 250 1294
[6] Feng J, Han J and Zhao X 2009 Prog. Org. Coat. 64 268
[7] Ohtani B, Iwai K, Nishimoto S and Sato S 1997 J.Phys. Chem. B 101 3349
[8] Blackwell R and Zhao Y 2008 J. Vac. Sci. Technol. B 26 1344
[9] Xiao X, Dong G, He H, Qi H, Fan Z and Shao J 2008 Appl. Surf. Sci. 255 2192
[10] Motohiro T and Taga Y 1989 Appl. Optics 282466
[11] Wu Q, Silva L, Arnold M, and Hodgkinson I 2004 J.Appl. Phys. 95 402
[12] He Y, Zhang Z, Hoffmann C and Zhao Y 2008 Adv.Funct. Mater. 18 1676
[13] Sun Y, Gates B, Mayers B and Xia Y 2002 Nano Lett. 2 165
[14] Sun Y, Yin Y, Mayers B, Herricks T and Xia Y 2002 Chem. Mater. 14 4736
[15] Xu G, Tazawa M, Jin P and Nakao S 2005 Appl. Phys.A: Mater. Sci. Process. 80 1535
[16] Qi H, Shao J and Fan Z 2007 Eur. Phys. Lett. 78 17004 |
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