| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric |
| YU Ai-Fang, QI Qiong, JIANG Peng, JIANG Chao |
| National Center for Nanoscience and Nanotechnology, No. 11, Beiyitiao Zhongguancun, Beijing 100190 |
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| Cite this article: |
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YU Ai-Fang, QI Qiong, JIANG Peng et al 2009 Chin. Phys. Lett. 26 078501 |
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Abstract Carrier mobility enhancement from 0.09 to 0.59cm2/Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO2 surface is believed to be the origin of the excellent carrier mobility of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski-Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility.
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| Keywords:
85.30.Tv
68.37.Ps
68.55.-a
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Received: 05 January 2009
Published: 02 July 2009
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| PACS: |
85.30.Tv
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(Field effect devices)
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68.37.Ps
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(Atomic force microscopy (AFM))
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68.55.-a
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(Thin film structure and morphology)
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