| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Wavelength Red-Shift of Long Wavelength InGaN/GaN Multi-Quantum Well by Using an InGaN Underlying Layer |
| HUANG Li-Rong, WEN Feng, TONG Liang-Zhu, HUANG De-Xiu |
| Wuhan National Laboratory for Optoelectronics, College of Opto-electronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 |
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| Cite this article: |
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HUANG Li-Rong, WEN Feng, TONG Liang-Zhu et al 2009 Chin. Phys. Lett. 26 078502 |
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Abstract Long-wavelength GaN based light-emitting diodes are of importance in full color displays, monolithic white light-emitting diodes and solid-state lighting, etc. However, their epitaxial growth faces great challenges because high indium (In) compositions of InGaN are difficult to grow. In order to enhance In incorporation and lengthen the emission wavelength of a InGaN/GaN multi-quantum well (MQW), we insert an InGaN underlying layer underneath the MQW. InGaN/GaN MQWs with various InGaN underlying layers, such as graded InyGa1-yN material with linearly increasing In content, or InyGa1-yN with fixed In content but different thicknesses, are grown by metal-organic chemical vapor deposition. Experimental results demonstrate the enhancement of In incorporation and the emission wavelength redshift by the insertion of an InGaN underlying layer.
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| Keywords:
85.60.Jb
85.35.Be
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Received: 23 March 2009
Published: 02 July 2009
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| PACS: |
85.60.Jb
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(Light-emitting devices)
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85.35.Be
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(Quantum well devices (quantum dots, quantum wires, etc.))
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81.15
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