| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors |
| ZHAO De-Gang1, JIANG De-Sheng1, LIU Zong-Shun1, ZHU Jian-Jun1, WANG Hui1, ZHANG Shu-Ming1, YANG Hui1,2 |
| 1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 1000832Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 |
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ZHAO De-Gang, JIANG De-Sheng, LIU Zong-Shun et al 2009 Chin. Phys. Lett. 26 058501 |
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Abstract The gain mechanism in GaN Schottky barrier ultraviolet photodetectors is investigated by focused light beam. When the incident light illuminates the central region of the Schottky contact electrode, the responsivity changes very little with the increase of reverse bias voltage. However, when the incident light illuminates the edge region of the electrode, the responsivity increases remarkably with the increase of reverse bias voltage, and the corresponding quantum efficiency could be even higher than 100%. It is proposed that the surface states near the edge of the electrode may lead to a reduction of effective Schottky barrier height and an enhancement of electron injection, resulting in the anomalous gain.
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| Keywords:
85.30.De
81.05.Ea
73.40.-c
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Received: 25 December 2008
Published: 23 April 2009
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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81.05.Ea
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(III-V semiconductors)
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73.40.-c
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(Electronic transport in interface structures)
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