| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers |
| XU Zhang-Cheng1, ZHANG Ya-Ting1, Jørn M. Hvam2, Yoshiji Horikoshi3 |
| 1Nano-photonics Group, Key Laboratory of Weak-Light Nonlinear Photonics Materials (MOE), TEDA College, Nankai University, Tianjin 3004572Department of Communications, Optics and Materials, and Nano.DTU, Technical University of Denmark, DK-2800 Lyngby, Denmark3School of Science & Engineering, Waseda University, Sinjuku-Ku, Tokyo 169-8555, Japan |
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| Cite this article: |
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XU Zhang-Cheng, ZHANG Ya-Ting, Jø et al 2009 Chin. Phys. Lett. 26 057304 |
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Abstract The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence of the QDs in the layer with a larger amount of coverage at 110K is observed, which can be explained by considering the resonant Förster energy transfer between the wetting layer states at elevated temperatures.
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| Keywords:
73.63.Kv
78.67.-n
78.55.Cr
73.40.Gk
78.55.-m
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Received: 05 February 2009
Published: 23 April 2009
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| PACS: |
73.63.Kv
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(Quantum dots)
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78.67.-n
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(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
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78.55.Cr
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(III-V semiconductors)
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73.40.Gk
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(Tunneling)
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78.55.-m
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(Photoluminescence, properties and materials)
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