Chin. Phys. Lett.  2009, Vol. 26 Issue (5): 057301    DOI: 10.1088/0256-307X/26/5/057301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Acceptor Concentration Effects on Photovoltaic Response in the La1-xSrxMnO3/SrNbyTi1-yO3 Heterojunction
LIAO Leng, JIN Kui-Juan, HAN Peng, ZHANG Li-Li, LÜ Hui-Bin, GE Chen
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academic of Sciences, Beijing 100190
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LIAO Leng, JIN Kui-Juan, HAN Peng et al  2009 Chin. Phys. Lett. 26 057301
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Abstract Photovoltaic response in the heterojunction of La1-xSrxMnO3/SrNbyTi1-yO3 (LSMO/SNTO) is analyzed theoretically based on the drift-diffusion model. It is found that the decrease of acceptor concentration in the La1-xSrxMnO3 layer of heterojunction can increase the peak value of photovoltaic signal and the speed of photovoltaic response, whereas the changing of donor concentration in the SrNbyTi1-yO3 layer has no such evident effect. Furthermore, the result also indicates that the modulation of Sr doping in La1-xSrxMnO3 is an effective method to accommodate the sensitivity and the speed of photovoltaic response for LSMO/SNTO photoelectric devices.
Keywords: 73.40.Lq      72.40.+w      78.20.Bh     
Received: 16 October 2008      Published: 23 April 2009
PACS:  73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  72.40.+w (Photoconduction and photovoltaic effects)  
  78.20.Bh (Theory, models, and numerical simulation)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/5/057301       OR      https://cpl.iphy.ac.cn/Y2009/V26/I5/057301
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LIAO Leng
JIN Kui-Juan
HAN Peng
ZHANG Li-Li
Hui-Bin
GE Chen
[1] Jin S, Tiefel T H, McCormack M, Fastnacht R A, Ramesh Rand Chen L H 1994 Science 15 264
[2] Urushibara A, Moritomo Y, Arima T, Asamitsu A, Kido G andTokura Y 1995 Phys. Rev. B 51 14103
[3] Tanaka H, Zhang J and Kawai T 2001 Phys. Rev. Lett. 88 027204
[4] Jin K J, Lu H B, Zhao K, Cheng B L, Chen Z H, Zhou Y L andYang G Z 2005 Phys. Rev. B 71 184428
[5] Katsu H, Tanaka H and Kawai T 2000 Appl. Phys. Lett 76 3245
[6] Jin K J, Zhao K, Lu H B, Liao L and Yang G Z 2007 Appl. Phys. Lett. 97 081906
[7] Han P, Jin K J, Lu H B, Zhou Q L and Yang G Z 2007 Appl. Phys. Lett. 86 182102 Qiu J, Jin K J, Han P, Lu H B, Hu C L, Wang B P and Yang G Z2007 Europhys. Lett. 79 57004 Zhou Q L, Jin K J, Lu H B, Han P, Chen Z H, Zhao K, Zhou Y Land Yang G Z 2005 Europhys. Lett. 71 283
[8] Selberherr S 1984 Analysis and Simulation ofSemiconductor Devices (New York: Springer) chaps 2 {\& 5
[9] Shockley W and Read W T 1952 Phys. Rev. 87 835
[10] Horio K and Yanai H 1990 IEEE Trans. ElectronDevices 37 1093
[11] Huang Y H, Jin K J, Zhao K, Lu H B, He M, Chen Z H, ZhouY L and Yang G Z 2006 Chin. Phys. Lett. 23 982
[12] Sharma B L and Purosit R K 1974 SemiconductorHeterojunctions(Oxford: Pergamon) p 24
[13] Kim M W, Murugavel P, Parashar S, Lee J S and Noh T W2004 New J. Phys. 6 156 Cohen M I and Blunt R F 1968 Phys. Rev. 168 929
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