| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz |
| CHENG Wei1, JIN Zhi1, SU Yong-Bo1, LIU Xin-Yu1, XU An-Huai2, QI Ming2 |
| 1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 1000292Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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CHENG Wei, JIN Zhi, SU Yong-Bo et al 2009 Chin. Phys. Lett. 26 038502 |
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Abstract To eliminate the conduction band spike at the base-collector interface, an InP/InGaAs double heterostructure bipolar transistor (DHBT) with an InGaAsP composite collector is designed and fabricated using the conventional mesa structure. The DHBT with emitter area of 1.6×15μm2 exhibits current-gain cutoff frequency ft = 242GHz at the high collector current density JC=2.1mA/μm2, which is to our knowledge the highest ft reported for the mesa InP DHBT in China. The breakdown voltage in common-emitter configuration is more than 5V. The high-speed InP/InGaAs DHBT with high current density is very suitable for the application in ultra high-speed digital circuits.
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| Keywords:
85.30.Pq
71.55.Eq
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Received: 03 September 2008
Published: 19 February 2009
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