| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition |
| CUI Xu-Gao, ZHANG Rong, TAO Zhi-Kuo, LI Xin, XIU Xiang-Qian, XIE Zi-Li, ZHENG You-Dou |
| Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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CUI Xu-Gao, ZHANG Rong, TAO Zhi-Kuo et al 2009 Chin. Phys. Lett. 26 038103 |
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Abstract Mn-doped GaN epitaxial films were grown by metal organic chemical vapour deposition (MOCVD). Micro-structural properties of films are investigated using Raman scattering. It is found that with increasing Mn-dopants levels, longitudinal optical phonon mode A1(LO) of films is broadened and shifted towards lower frequency. This phenomenon possibly derives from the difference in bonding strength between Ga-N pairs and Mn-N pairs in host lattice. In addition, optical properties of films are investigated using cathodoluminescence and absorption spectroscopy. Mn-related both emission band around 3.0eV and absorption bands around 1.5 and 2.95eV are observed. By studies on structural and optical properties of Mn-doped GaN, we find that Mn ions substitute for Ga sites in host lattice. However, carrier-mediated ferromagnetic exchange seems unlikely due to deep levels of Mn acceptors.
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| Keywords:
81.15.Gh
81.05.Ea
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Received: 10 September 2008
Published: 19 February 2009
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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81.05.Ea
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(III-V semiconductors)
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