| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation |
| SUN Hua-Jun1, HOU Li-Song1, WU Yi-Qun1, TANG Xiao-Dong2 |
| 1Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 2018002Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200241 |
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| Cite this article: |
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SUN Hua-Jun, HOU Li-Song, WU Yi-Qun et al 2009 Chin. Phys. Lett. 26 024203 |
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Abstract We demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using Ge1Sb4Te7 films as the working material. The polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (CAFM). This reversible SET/RESET switching effect is induced by voltage pulses and their polarity. The change of electrical resistance due to the switching effect is approximately two orders of magnitude.
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| Keywords:
42.79.Vb
84.37.+q
61.43.Dq
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Received: 04 June 2008
Published: 20 January 2009
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| PACS: |
42.79.Vb
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(Optical storage systems, optical disks)
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84.37.+q
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(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
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61.43.Dq
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(Amorphous semiconductors, metals, and alloys)
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