| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Influence of Oxygen Pressure on Structural and Sensing Properties of β-Ga2O3 Nanomaterial by Thermal Evaporation |
| MA Hai-Lin1,2, FAN Duo-Wang1,2 |
| 1National Engineering Research Center of Green Coating Technology and Equipment, Lanzhou Jiaotong University, Lanzhou 7300702MOE Key Lab of Opto-electronic Technology and Intelligence Control, Lanzhou Jiaotong University, Lanzhou 730070 |
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| Cite this article: |
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MA Hai-Lin, FAN Duo-Wang 2009 Chin. Phys. Lett. 26 117302 |
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Abstract We prepare the gallium oxide (β-Ga2O3) nanomaterials from gallium and oxygen by thermal evaporation in the argon atmosphere and research their oxygen sensing under UV illumination with different oxygen pressures. X-ray diffraction reveals that the synthesized product is monoclinic gallium oxide, it is further confirmed by electron diffraction of transmission electron microscope, and its morphology through the observation using scanning electron microscope reveals that β-Ga2O3 nanobelts with a breadth less than 100nm and length of several micrometers are synthesized under low oxygen pressure, while the nano/microbelts are synthesized under high oxygen pressure. Room-temperature oxygen sensing is tested under at 254nm illumination and it is found that the current decreases quickly first and then slowly with oxygen pressure from low to high.
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| Keywords:
73.20.At
73.25.+i
73.50.Gr
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Received: 30 July 2009
Published: 30 October 2009
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| PACS: |
73.20.At
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(Surface states, band structure, electron density of states)
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73.25.+i
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(Surface conductivity and carrier phenomena)
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73.50.Gr
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(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
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[1] Ma H L et al 2008 Acta Phys. Sin. 57 7322 (inChinese)
[2] Wu X C et al 2000 Chem. Phys. Lett. 328 5
[3] Rustum R et al 1952 J. Am. Chem. Soc. 74 719
[4] Tippins H H 1965 Phys. Rev. A 140 316
[5] Nogales E et al 2005 Appl. Phys. Lett. 86113112
[6] Bezryadin A, Lau C N, Tinkham M 2000 Nature 404 971
[7] Feng P, Xue X Y et al 2006 Appl. Phys. Lett. 89 112114
[8] Sears G W 1953 Acta Metall. l 457
[9] Sears G W 1955 Acta Metal. 3 361
[10] Sears G W 1955 Acta Metall. 3 367
[11] Harwig T, Kellendonk F 1978 J. Solid State Chem. 24 255
[12] Jalilian R et al 2006 Chem. Phys. Lett. 426393
[13] Huang Y et al 2006 J. Phys. Chem. B 110 796
[14] Liu Y G, Feng P, Xue X Y, Shi S L, Fu X Q, Wang C andWang T H 2007 Appl. Phys. Lett. 90 042109
[15] Heo Y W, Tien L C, Norton D P and Pearton S J 2004 Appl. Phys. Lett. 85 11
[16] Collins R J and Thomas D G 1958 Phys. Rev. 388 112
[17] Zhu J, Zhu G P et al 2008 Chin. Phys. Lett. 26 014204
[18] Yun J N, Zhang Z Y and Zhang F C 2008 Chin. Phys.Lett. 25 3364
[19] Lu S, Shang J X and Zhang Y 2007 Chin. Phys. Lett. 24 3229 |
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