Chin. Phys. Lett.  2009, Vol. 26 Issue (11): 117303    DOI: 10.1088/0256-307X/26/11/117303
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Operation Mechanism of Double-Walled Carbon Nanotubes Transistors Investigated By ab initio Calculations
LAN Hai-Ping, ZHANG Shuang
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871
Cite this article:   
LAN Hai-Ping, ZHANG Shuang 2009 Chin. Phys. Lett. 26 117303
Download: PDF(529KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Recently, a new switching characteristic of double-walled carbon nanotubes (DWNTs) transistors is found in during experiments. We carry out a series of ab intio calculations on DWNTs' electronic properities, together with verification on the electronic response under the electric field. Our results reveal that the peculiar energy states relation in DWNTs and related contact modes should account for the distinct switching behavior of DWNT transistors. We believe these results have important implications in the fabrication and understanding of electronic devices with DWNTs.
Keywords: 73.22.-f      73.63.Fg     
Received: 11 January 2009      Published: 30 October 2009
PACS:  73.22.-f (Electronic structure of nanoscale materials and related systems)  
  73.63.Fg (Nanotubes)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/26/11/117303       OR      https://cpl.iphy.ac.cn/Y2009/V26/I11/117303
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
LAN Hai-Ping
ZHANG Shuang
[1] Charlier J C, Blase X and Roche S 2007 Rev. Mod.Phys. 79 677
[2] Jorio A, Dresselhaus G and Dresselhaus M S 2008 Carbon Nanotubes:Advanced Topics in the Synthesis, Structure,Properties and Applications (Berlin: Springer)
[3] Moon S, Song W, Lee J S, Kim N, Kim J, Lee S G and Choi MS 2007 Phys. Rev. Lett. 99 176804
[4] Shan B and Cho K 2006 Phys. Rev. B 73 081401
[5] Su W S, Leung T C and Chan C T 2007 Phys. Rev. B 76 235413
[6] Wang S, Liang X L, Chen Q, Zhang J and Peng L M 2005 J. Phys. Chem. B 109 17361
[7] Liang X L, Wang S,Duan X J, Zhang Z Y, Chen Q, Zhang J andPeng L M 2007 J. Nanosci. Nanotechnol. 7 1568
[8] Lu J, Sun Y, Peng L M, Sun Z Z and Wang X R 2007 Appl. Phys. Lett. 90 052109
[9] Lu J and Wang S D 2007 Phys. Rev. B 76 233103
[10] Okada S and Oshiyama A 2003 Phys. Rev. Lett. 91 216801
[11] Wang S D and Grifoni M 2007 Phys. Rev. B 76033413
[12] Giannozzi P et al http://www.quantum-espresso.org
[13] Neugebauer J and Scheffler M 1992 Phys. Rev. B 46 16067
[14] Giusca C E, Tison Y, Stolojan V, Borowiak-Palen E andSilva S R P 2007 Nano Lett. 7 1232
[15] Heinze S, Tersoff J, Martel R, Derycke V, Appenzeller Jand Avouris P 2002 Phys. Rev. Lett. 89 106801
[16] Lundstrom M S and Guo J 2006 {\em Nanoscale Transistors:Device Physics, Modeling and Simulation (New York: Springer)
[17] Chen G G, Bandow S, Margine E R, Nisoli C, Kolmogorov AN, Crespi V H, Gupta R, Sumanasekera G U, Iijima S and Eklund P C2003 Phys. Rev. Lett. 90 257403
[18] Nemec N, Tomanek D and Cuniberti G 2006 Phys. Rev.Lett. 96 076802
Related articles from Frontiers Journals
[1] M. R. Setare, *, D. Jahani, ** . Quantum Hall Effect and Different Zero-Energy Modes of Graphene[J]. Chin. Phys. Lett., 2011, 28(9): 117303
[2] WANG Yong-Juan **, CHENG Jie, YUE Xian-Fang . Electronic Properties of the N2C4 Cluster of DNA[J]. Chin. Phys. Lett., 2011, 28(8): 117303
[3] PAN Li-Jun, JIA Yu, **, SUN Qiang, HU Xing . Electronic Properties of Boron Nanotubes under Uniaxial Strain: a DFT study[J]. Chin. Phys. Lett., 2011, 28(8): 117303
[4] WANG Lin-Jun, CAO Gang, TU Tao**, LI Hai-Ou, ZHOU Cheng, HAO Xiao-Jie, GUO Guang-Can, GUO Guo-Ping** . Ground States and Excited States in a Tunable Graphene Quantum Dot[J]. Chin. Phys. Lett., 2011, 28(6): 117303
[5] OUYANG Fang-Ping, **, CHEN Li-Jian, XIAO Jin, ZHANG Hua . Electronic Properties of Bilayer Zigzag Graphene Nanoribbons: First Principles Study[J]. Chin. Phys. Lett., 2011, 28(4): 117303
[6] YANG Cheng, ZHANG Gang, LEE Dae-Young, LI Hua-Min, LIM Young-Dae, YOO Won Jong**, PARK Young-Jun, KIM Jong-Min . Self-Assembled Wire Arrays and ITO Contacts for Silicon Nanowire Solar Cell Applications[J]. Chin. Phys. Lett., 2011, 28(3): 117303
[7] WEI Ang, LI Wei-Wei, WANG Jing-Xia, LONG Qing, WANG Zhao, XIONG Li, DONG Xiao-Chen**, HUANG Wei** . Single-Walled Carbon Nanotube Networked Field-Effect Transistors Functionalized with Thiolated Heme for NO2 Sensing[J]. Chin. Phys. Lett., 2011, 28(12): 117303
[8] WANG Tao, GUO Qing**, AO Zhi-Min**, LIU Yan, WANG Wen-Bo, SHENG Kuang, YU Bin, . The Tunable Bandgap of AB-Stacked Bilayer Graphene on SiO2 with H2O Molecule Adsorption[J]. Chin. Phys. Lett., 2011, 28(11): 117303
[9] LI Ji-Ling, YANG Guo-Wei, ZHAO Ming-Wen, LIU Xiang-Dong, XIA Yue-Yuan**. Tuning Bandgap of Si-C Heterofullerene-Based Aanotubes by H Adsorption[J]. Chin. Phys. Lett., 2010, 27(9): 117303
[10] LI Jin, SUN Li-Zhong, ZHONG Jian-Xin. Strain Effects on Electronic Properties of Boron Nitride Nanoribbons[J]. Chin. Phys. Lett., 2010, 27(7): 117303
[11] LIAO Bin, WU Xian-Ying, LIANG Hong, ZHANG Xu, LIU An-Dong. Preparation and Photocurrent Performance of Highly Ordered Titania Nanotube Implanted with Ag/Cu Metal Ions[J]. Chin. Phys. Lett., 2010, 27(7): 117303
[12] PAN Li-Jun, CHEN Wei-Guang, ZHANG Rui-Qin, HU Xing, JIA Yu. Influence of High Atomic Hydrogenation on the Electronic Structure of Zigzag Carbon Nanotubes: A First-Principles Study[J]. Chin. Phys. Lett., 2010, 27(7): 117303
[13] XU Yue-Hua, JIA Yong-Lei, ZHOU Jian, DONG Jin-Ming. Infrared Absorption Spectra of Undoped and Doped Few-Layer Graphenes[J]. Chin. Phys. Lett., 2010, 27(5): 117303
[14] HAN Mei, ZHANG Yong, ZHENG Hong-Bo. Effect of Uniaxial Strain on Band Gap of Armchair-Edge Graphene Nanoribbons[J]. Chin. Phys. Lett., 2010, 27(3): 117303
[15] SHAO Jia-Feng, A. G. U. Perera, P. V. V. Jayaweera, HE De-Yan. Low-Cost UV-IR Dual Band Detector Using Nonporous ZnO Film Sensitized by PbS Quantum Dots[J]. Chin. Phys. Lett., 2010, 27(2): 117303
Viewed
Full text


Abstract