| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric |
| HUANG Yue1, GOU Hong-Yan1, SUN Qing-Qing1, DING Shi-Jin1, ZHANG Wei1, ZHANG Shi-Li1,2 |
| 1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 2004332School of Information and Communication, KTH, Royal Institute of Technology, Electrum 229, SE-164 40 Kista, Sweden |
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| Cite this article: |
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HUANG Yue, GOU Hong-Yan, SUN Qing-Qing et al 2009 Chin. Phys. Lett. 26 108102 |
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Abstract We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO2 films aminosilanized by (3-Aminopropyl)-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4×1011cm-2 and a diameter range of 5-8nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO2 dielectric exhibits a large C-V hysteresis window of 11.9V for ± 11V gate voltage sweeps at 1MHz, a flat-band voltage shift of 1.5V after the electrical stress under 7V for 1ms, a leakage current density of 2.9×10-8 A/cm-2 at 9V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed.
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| Keywords:
81.07.Bc
81.16.Dn
82.25.Hv
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Received: 30 March 2009
Published: 27 September 2009
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