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Nanoscale Thermal Response in ZnO Varistors by Atomic Force Microscopy |
ZHAO Kun-Yu1,2, ZENG Hua-Rong1, LI Guo-Rong1, SONG Hong-Zhang1, CHENG Li-Hong1,2, HUI Sen-Xing1, YIN Qing-Rui1 |
1State Key Lab of High Performance Ceramics and Superfine Structures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing 100049 |
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Cite this article: |
ZHAO Kun-Yu, ZENG Hua-Rong, LI Guo-Rong et al 2009 Chin. Phys. Lett. 26 100701 |
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Abstract We report the application of customer-built scanning thermal microscopy (SThM) based on a commercial atomic force microscope to investigate local thermal inhomogeneity of ZnO varistors. The so-called 3ω method, generally used for measuring macroscale thermal conductivity, is set up and integrated with an atomic force microscope to probe the nanoscale thermal property. Remarkably, thermal contrasts of ZnO varistors are firstly imaged by the SThM, indicating the uniform distribution of spinel phases at triple points. The frequency-dependent thermal signal of ZnO varistors is also studied to present quantitative evaluation of local thermal conductivity of the sample.
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Keywords:
07.79.Lh
42.70.Nq
51.20.+d
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Received: 02 March 2009
Published: 27 September 2009
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PACS: |
07.79.Lh
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(Atomic force microscopes)
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42.70.Nq
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(Other nonlinear optical materials; photorefractive and semiconductor materials)
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51.20.+d
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(Viscosity, diffusion, and thermal conductivity)
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[1] Levinson L M and Philipp H R 1986 Am. Ceram. Soc.Bull. 65 639 [2] Blatter G and Greuter F 1990 Semicond. Sci. Technol. 5 111 [3] Bartkowiak M, Mahan G D, Modine F A and Alim M A 1996 J. Appl. Phys. 79 273 [4] Sato Y, Oba F, Yodogawa M, Yamamoto T and Ikuhara Y 2004 J. Appl. Phys. 95 1258 [5] Nabhan W, Equer B, Broniaowski A and Derosny G 1997 Rev. Sci. Instrum. 68 3108 [6] Huey B D and Bonnell D A 2000 Solid State Ion 131 51 [7] Huey B D, Lisjak D and Bonnell D A 1999 J. Amer.Ceram. Soc. 82 1941 [8] Clarke D R 1979 J. Appl. Phys. 50 6829 [9] Ding X D, Fu G, Xiong X M and Zhang J X 2008 Chin.Phys. Lett. 25 3597 [10] Wang H B, Zhou X F, An H J, Guo Y C, Sun J L, Zhang Y andHu J 2007 Chin. Phys. Lett. 24 644 [11] Zhao K Y, Zeng H R et al 2008 Chin. Phys. Lett. 25 3429 [12] Ma H X, Han Y J, Shentu W J, Zhang X P and Luo Y 2006 Chin. Phys. Lett. 23 2299 [13] Gomes S et al 2001 Int. J. Therm. Sci. 40 949 [14] Guo F A, Trannoy N and Gerday D 2005 J. Eur. Ceram.Soc. 25 1159 [15] Szeloch R F, Gotszalk T P and Janus P 2002 Microelectronics Reliability 42 1719 [16] Altes A et al 2004 J. Phys. D: Appl. Phys. 37952 [17] Barrado C M et al 2004 Mater. Sci. Eng. A 371377 [18] Chirtoc M et al 2004 Superlattices andMicrostructures 35 305 |
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